Abstract: A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

Abstract: In an embodiment a method includes providing a light-emitting diode chip and a phosphor body, applying a sacrificial layer to a top side of the phosphor body only, placing the phosphor body onto the light-emitting diode chip, molding an encapsulation body directly around the light-emitting diode chip and the phosphor body by a film assisted molding, wherein at least in places a top face of the sacrificial layer facing away from the phosphor body remains unsealed with a molding film, and removing the sacrificial layer so that the top side of the phosphor body is free of the sacrificial layer.

Abstract: The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

Abstract: In an embodiment a semiconductor chip includes a semiconductor body having a first region, a second region, and an active region between the first region and the second region, indentations in the first region, a TCO material in the indentations and a carrier, wherein the indentations of the first region are arranged on a side of the first region facing away from the carrier, and wherein the TCO material is flush with a surface of the first region facing away from the active region.

Abstract: A method for producing a radiation emitting semiconductor chip may include providing a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, applying a reflective layer sequence over the semiconductor layer sequence, generating a first recess through an opening of a mask where the first recess completely penetrates the reflective layer sequence and the active region, and applying a dielectric mirror layer in the first recess through the same opening of the same mask. Furthermore, a radiation emitting semiconductor chip is disclosed.

Abstract: A picture element for a display device includes a first and a second supply connection, a light-emitting semiconductor device arranged between the first and the second supply terminal, and a comparison unit having a first and a second input and an output. The comparison unit is configured to adjust a voltage at the output in dependence on a comparison of a voltage applied to the first input and a voltage applied to the second input. The picture element also includes a supply switch-configured to control a current flow between the first and the second supply terminal via the light-emitting semiconductor device depending on the voltage applied at the output of the comparison unit. The picture element further includes a selection input, a data input, a memory element and a control switch.

Abstract: In an embodiment a storage device includes a base carrier extending along a main surface having a surface structuring, a carrier foil including a first main surface and a second main surface, wherein the first main surface is fixable to or arrangeable on the main surface of the base carrier, and wherein the components are fixable to the second main surface and a fixing frame fixing the carrier foil, which is fixed or positioned to the main surface of the base carrier, to the base carrier and acting as a releasable clamp so that the carrier foil is clampable and securable in or to the base carrier.

Abstract: A method for preparing a wavelength converting film is disclosed. The method comprising mixing at least one phosphor, a polysiloxane and optionally an organic solvent, thereby preparing a mixture, placing the mixture on a substrate, pre-curing the mixture on the substrate, thereby preparing a wavelength converting film. Furthermore, a wavelength converting film is disclosed, a method for preparing a light-emitting device and a light-emitting device.

Abstract: In an embodiment an apparatus includes at least one optoelectronic laser configured to provide excitation radiation to a sample, the excitation radiation being generated by an electric current flowing through the at least one optoelectronic laser, a transistor configured to modulate the electric current flowing through the at least one optoelectronic laser in order to switch on and off generation of the excitation radiation and a spectrometer configured to analyze Raman light scattered from the sample in response to exposing the sample to the excitation radiation, wherein the Raman light includes one or more spectral components, wherein the spectrometer includes a diffraction element configured to split the Raman light into the spectral components, and wherein the diffraction element includes at least a photonic crystal or a plasmonic Fabry Perot filter.

Abstract: A display device with a connection carrier and a plurality of pixels, which are drivable via row lines and column lines, is specified. The row lines and the column lines are arranged on the connection carrier. At least one row line is interrupted at an imaginary crossing point with a column line on the connection carrier. A bridging component is arranged on the connection carrier, which bridges the row line at the imaginary crossing point in an electrically conductive manner.

Abstract: A laser device comprises a carrier, an optoelectronic component provided on the carrier, said component being designed to emit laser radiation, and an optical element designed to form the laser radiation emitted by the optoelectronic component, wherein: the optical element has a first layer that is at least partially transparent to the laser radiation, with a first refractive index, and a second layer that is at least partially transparent to the laser radiation, with a second refractive index; the first layer being applied to the optoelectronic component and having a surface with an imprinted structure; and the second layer is applied to the first layer, on the surface (24) having the imprinted structure.

Abstract: A radiation emitting semiconductor chip may include a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, a first dielectric mirror layer arranged above the semiconductor layer sequence, and a second dielectric mirror layer arranged above the first dielectric mirror layer. The first dielectric mirror layer may have at least one first recess. A first current spreading layer may be arranged in the first recess and above the first dielectric mirror layer. The second dielectric mirror layer may have at least one second recess extending up to the first current spreading layer. The first recess may not overlap with the second recess in lateral direction in plan view. Furthermore, a method for producing a radiation emitting semiconductor chip is disclosed.

Abstract: In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

Abstract: The invention relates to an optoelectronic component comprising a housing, an optoelectronic semiconductor chip and an optical element. The housing comprises a lead frame which has two external electrical contact points and two contact portions. The housing also comprises a housing body in which the lead frame is embedded, wherein each contact portion extends laterally out of one of the external electrical contact points in each case to a mounting surface of the housing, and therefore contact surfaces of the contact portions are exposed on the mounting surface. An electrical contact structure of the optical element is electrically conductively connected to the contact surfaces of the contact portions.

Abstract: A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

Abstract: In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlxGa1-x)yIn1-y]zP1-z with x?0.5, and wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o<a?0.2.

Abstract: A laser device comprises a plurality of laser diodes, each laser diode emitting a light beam having a fast axis and a slow axis and a beam direction; and one or more optical components configured to modify a divergence of the light beams in a fast axis plane and/or in a slow axis plane such that the light beams have a same focal plane in the fast axis plane and in the slow axis plane.

Abstract: In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component includes a semiconductor body having an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face, an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components, wherein the output element is arranged at the radiation outlet sides of the semiconductor components, wherein the electrical connection structure is electrically conductively connected with the contact structure, and wherein the connection structure includes an adhesive layer, a growth layer and a co

Abstract: In an embodiment a method for producing a lighting device includes providing a wafer assemblage having a semiconductor layer sequence arranged on a carrier substrate, separating the wafer assemblage into a plurality of first optoelectronic semiconductor chips, each comprising a section of the semiconductor layer sequence and of the carrier substrate, transferring at least some of the first optoelectronic semiconductor chips to a first auxiliary carrier, wherein the first auxiliary carrier has contact pads on a main surface, wherein the contact pads are surrounded and delimited in each case by a contour, and wherein each of the first optoelectronic semiconductor chips is arranged on a contact pad, cutting, on the first auxiliary carrier, to size the first optoelectronic semiconductor chips in order to adapt the first optoelectronic semiconductor chips to a predefined shape such that the each first optoelectronic semiconductor chip lies completely within the contour of an assigned contact pad, and transferring