Patents Assigned to OSRAM Opto Semiconductors GmbH
  • Publication number: 20190312406
    Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.
    Type: Application
    Filed: May 31, 2017
    Publication date: October 10, 2019
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventor: Wolfgang Reill
  • Patent number: 10439104
    Abstract: The invention relates to an optoelectronic component (10), comprising a carrier (1) and a plurality of nanorods (2), which are arranged on the carrier (1), wherein the nanorods (2) each comprise an active zone (2d). Furthermore, the optoelectronic component (10) comprises a potting compound (3), which is arranged on the carrier (1) and at least partially embeds the nanorods (2), and a structured metallization (5), which laterally surrounds the nanorods (2), wherein the nanorods (2) extend in a longitudinal direction N, the structured metallization (5) extends in a longitudinal direction M, and the longitudinal direction M of the structured metallization (5) extends transversely to the longitudinal direction N of the nanorods (2).
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: October 8, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Hubert Halbritter, Ines Pietzonka
  • Patent number: 10439096
    Abstract: Disclosed is an optoelectronic semiconductor chip (10) comprising: —a succession of semiconductor layers (1) that has a main plane of extension, an active layer (12) and a bottom surface (1c); —a substrate (41) that is arranged on the bottom surface (1c) of the succession of semiconductor layers (1) and has a base surface (41c) facing away from the bottom surface (1c); and —a succession of joining layers (3) which is arranged in at least some locations between the succession of semiconductor layers (1) and the substrate (41) in a vertical direction; wherein —the substrate (41) laterally protrudes from the succession of semiconductor layers (1) by a maximum of 10 ?m.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: October 8, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Johannes Baur, Lutz Hoeppel
  • Patent number: 10431715
    Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11?c25 and c11?c13?c12.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: October 1, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Barbara Behr, Andreas Weimar, Mathias Wendt, Marcus Zenger
  • Patent number: 10431954
    Abstract: A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: October 1, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Jan Seidenfaden, Jan Marfeld, Hubert Schmid, Soenke Tautz, Roland Enzmann
  • Patent number: 10421904
    Abstract: A semiconductor structure and a light-emitting device having a light-emitting diode and a plurality of semiconductor structures are disclosed. In an embodiment, the semiconductor structure includes an elongated seed particle including a first semiconductor material, wherein the seed particle has an aspect ratio of greater than 2.0, and wherein the semiconductor structure is part of or forms a quantum dot.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Bob Fitzmorris, Joseph Treadway
  • Patent number: 10424898
    Abstract: A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alexander Bachmann, Christian Lauer, Michael Furitsch
  • Patent number: 10424698
    Abstract: A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space, applying a conversion layer on to the thinned growth substrate and singulating at least the thinned growth substrate and the semiconductor layer sequence.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Leirer, Korbinian Perzlmaier
  • Patent number: 10426006
    Abstract: An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein the diodes have electrical connections, the electrical connections are led to contact areas, and the contact areas are arranged on an underside of the first carrier; and a second carrier, wherein further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and fixedly connects to the second carrier, and an electronic circuit for open-loop and/or closed-loop control of the power supply of the diodes is integrated in the second carrier.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Nagel, Stefan Illek
  • Patent number: 10424565
    Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductor GmbH
    Inventors: Andreas Weimar, Frank Singer, Anna Kasprzak-Zablocka, Sabine vom Dorp
  • Patent number: 10424509
    Abstract: A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. The method further includes applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method and applying a passivation layer to the side face of the at least one recess.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Franz Eberhard
  • Patent number: 10418515
    Abstract: An optoelectronic lighting device includes a black housing including a cavity, wherein the cavity includes a base, a semiconductor component is arranged on the base of the cavity with an underside of a main body facing the base, and the cavity is filled with a reflective material from the base up to a predetermined height, which is smaller than a height of a top side of the main body relative to the base of the cavity such that electromagnetic radiation emerging from the main body through side faces may be reflected by the reflective material back in the direction of the side faces to couple reflected electromagnetic radiation into the main body such that at least part of the electromagnetic radiation coupled in may emerge again from the main body through the top side of the main body.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: September 17, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Markus Wicke, Michael Wittmann
  • Patent number: 10418529
    Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: September 17, 2019
    Assignees: OSRAM Opto Semiconductors GmbH, OSRAM GmbH
    Inventors: Britta Göötz, Frank Singer, Roland Hüttinger
  • Patent number: 10418535
    Abstract: An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: September 17, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Korbinian Perzlmaier, Anna Kasprzak-Zablocka, Christine Rafael, Christian Leirer
  • Patent number: 10418530
    Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers.
    Type: Grant
    Filed: November 25, 2015
    Date of Patent: September 17, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Reiner Windisch, Joerg Erich Sorg, Ralph Wirth
  • Patent number: 10418355
    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: September 17, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Rainer Butendeich, Alexander Walter, Matthias Peter, Tobias Meyer, Tetsuya Taki, Hubert Maiwald
  • Patent number: 10415763
    Abstract: A filament for a filament lamp includes a plurality of light emitting semiconductor chips, wherein the light emitting semiconductor chips are located on a carrier board, the light emitting semiconductor chips are electrically connected, and the carrier board is a flexible carrier board.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: September 17, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Tilman Eckert
  • Patent number: 10411157
    Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including first and second electrical contacts, a first leadframe section including a first chip contact pad and a first soldering contact pad situated opposite the first chip contact pad, and a second leadframe section including a second chip contact pad and a second soldering contact pad situated opposite the second chip contact pad, wherein the first electrical contact electrically conductively connects to the first chip contact pad and the second electrical contact electrically conductively connects to the second chip contact pad, the first and second leadframe sections are embedded into a housing such that at least parts of the first and second soldering contact pads are accessible at an underside, and a solder stop element is arranged at the underside of the housing, the solder stop element extending between the first soldering contact pad and the second soldering contact pad.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: September 10, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Gatzhammer, Martin Brandl, Tobias Gebuhr
  • Patent number: 10407613
    Abstract: A semiconductor structure includes a quantum dot. A polymeric organic layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional organic layer and/or inorganic insulator layer encapsulates the coated quantum dot, wherein forming the one or more layers of organic material that encapsulates the coated quantum dot comprises forming a plurality of layers of polymers using a layer-by-layer deposition process.
    Type: Grant
    Filed: January 24, 2018
    Date of Patent: September 10, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Weiwen Zhao, Juanita N. Kurtin
  • Patent number: 10411170
    Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: September 10, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Sonja Tragl, Dominik Eisert, Stefan Lange, Nils Kaufmann, Alexander Martin, Krister Bergenek