Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

Abstract: A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.

Abstract: An optoelectronic component (1) comprises a carrier (2) and at least one semiconductor chip (3). The semiconductor chip (3) is arranged on the carrier (2) and designed for emitting a primary radiation (6). The semiconductor chip (3) is at least partly enclosed by an at least partly transparent medium (7) having a height (8) above the carrier (2) and a width (9) along the carrier (2). Particles (10, 11) are introduced into the medium (7) and interact with the primary radiation (6). The medium (7) has a ratio of the height (8) to the width (9) of greater than 1.

Abstract: An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength.

Abstract: A radiation-emitting component includes a semiconductor layer stack having an active region that emits electromagnetic radiation, and at least one surface of the semiconductor layer stack or of an optical element that transmits the electromagnetic radiation wherein the surface has a normal vector, wherein on the at least one surface of the semiconductor layer stack or of the optical element through which the electromagnetic radiation passes, an antireflection layer is arranged such that, for a predetermined wavelength, it has a minimum reflection at a viewing angle relative to the normal vector of the surface at which an increase in a zonal luminous flux of the electromagnetic radiation has approximately a maximum.

Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

Abstract: In at least one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer configured to generate a primary radiation having a main wavelength less than 500 nm. The semiconductor chip contains a first conversion element configured to generate a first secondary radiation and a second conversion element configured to generate a second secondary radiation. The semiconductor layer sequence is divided into segments that can be controlled electrically independently of each other and that are arranged laterally adjacent to each other. The conversion elements are attached to main radiation sides of the segments. The first secondary radiation is colored light and the second secondary radiation white light.

Abstract: An organic light-emitting component includes a first light-emitting layer sequence, which is designed to emit light in a first wavelength range during the operation of the component. A second light-emitting layer sequence which is designed to emit light in a second wavelength range during the operation of the component. A charge carrier generating layer sequence which is designed to output charge carriers to the first light-emitting layer sequence and to the second light-emitting layer sequence during the operation of the component. The first wavelength range differs from the second wavelength range. The charge carrier generating layer sequence is arranged between the first light-emitting layer sequence and the second light-emitting layer sequence in a stacking direction of the organic light-emitting component.

Abstract: In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Abstract: In at least one embodiment, the semiconductor component includes a semiconductor layer sequence with an active layer for generating an electromagnetic radiation. The semiconductor component includes a radiation-permeable element and a connecting element. The connecting element is layered in form and connects the radiation-permeable element and the semiconductor layer sequence to another mechanically. The connecting element is designed to be passed through by at least one part of the radiation generated in the active layer. A refractive index of the connecting means deviates from a refractive index of the semiconductor layer sequence by a maximum of 25%. The connecting element includes at least two principal components, which are solids at a temperature of 300 K. At least one of the principal components has a melting temperature of no more than 750 K.

Abstract: In at least one embodiment of the optoelectronic semiconductor component (1), the optoelectronic semiconductor component has a support (2). At least one optoelectronic semiconductor chip (3) with a radiation outlet face (30) is applied onto a support upper face (20). A sacrificial layer (5) is located over the radiation outlet face (30) in the direction away from the support (2). A housing body (6) which has a housing upper face (60) is molded around the semiconductor chip (3) and/or around the sacrificial layer (5) in a lateral direction parallel to the radiation outlet face (30). A sacrificial layer (5) upper face (50) which faces away from the radiation outlet face (30) is free of a housing body (6) material.

Abstract: A method for producing an optoelectronic component is provided. A transfer layer, containing InxGa1-xN with 0<x<1, is grown onto a growth substrate. Subsequently, ions are implanted into the transfer layer to form a separation zone, a carrier substrate is applied, and the transfer layer is separated by way of heat treatment. A further transfer layer, containing InyGa1-yN with 0<y?1 and y>x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.

Abstract: An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier.

Abstract: An organic light-emitting component is specified, comprising a translucent substrate (1), on which a translucent electrode (3) is arranged, comprising on the translucent electrode (3) an organic functional layer stack comprising organic functional layers having at least one organic light-emitting layer (5) and comprising a further electrode (7), wherein the at least one organic light-emitting layer (5) comprises emitter molecules having an anisotropic molecular structure which are oriented anisotropically, and wherein all the organic light-emitting layers (5, 51, 52, 53) of the organic light-emitting component are at a distance of greater than or equal to 20 nm and less than or equal to 100 nm from the further electrode (7).

Abstract: A light source comprises a light-emitting device to emit electromagnetic radiation from an emitting surface and an optical element having a light input surface, a light output surface and side surfaces connecting the light input surface to the light output surface. The light input surface is located in the optical path of the light-emitting device, the electromagnetic radiation entering the optical element through the light input surface, and the light input surface has a concave curvature and an area being smaller than the area of the light output surface.

Abstract: An organic luminous means and an illumination device comprising such a luminous means are specified. An optical display apparatus, emergency lighting, motor vehicle interior lighting, an item of furniture, a construction material, a glazing and a display comprising such a luminous means and, respectively, comprising an illumination device having such a luminous means are furthermore specified.

Abstract: A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region.

Abstract: A device is intended for a laser lift-off method to sever at least one layer from a carrier. The device includes a laser that generates pulsed laser radiation and at least one beam splitter. The laser radiation is divided into at least two partial beams by the at least one beam splitter. The partial beams are superimposed in an irradiation plane, the irradiation plane being provided such that a major side of the carrier remote from the layer is arranged therein. At the irradiation plane, an angle (?) between the at least two partial beams is at least 1.0°.

Abstract: A light emitting device including a light emitting diode having a semiconductor body that generates electromagnetic radiation; a converter element downstream of the first light emitting diode which converts at least part of the electromagnetic radiation into first color light; a second light emitting diode having a semiconductor body that generates light of the first color; a radiation exit area from which the first color light emerges; and a drive circuit operating the second light emitting diode, wherein the converter element contains at least one luminescence conversion material that emits the first color light, as the operating duration of the first light emitting diode increases, intensity of the first color light emitted by the converter element decreases, the drive circuit controls the second light emitting diode dependent on at least one of measurement values: intensity of the first color light emitted by the converter element, temperature of the converter element, operating duration of the first ligh

Abstract: An optoelectronic semiconductor component (100) is specified, with a support (1) which has a mounting surface (11) and at least one penetration (3), where the penetration (3) extends from the mounting surface (11) to a bottom surface (12) of the support (1) that lies opposite the mounting surface (11); at least one optoelectronic semiconductor chip (2), which is mounted on the mounting surface (11); a radiation-transparent casting body (5), which surrounds the at least one optoelectronic semiconductor chip (2) at least in places, where the casting body (5) is arranged at least in places in the penetration (3) of the support (1).