Abstract: A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.
Type:
Application
Filed:
September 30, 2011
Publication date:
October 10, 2013
Applicant:
OSRAM OPTP SEMICONDUCTORS GMBH
Inventors:
Joachim Hertkorn, Tetsuya Taki, Jürgen Off
Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasma-enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).
Type:
Application
Filed:
January 29, 2009
Publication date:
May 26, 2011
Applicant:
OSRAM OPTP SEMICONDUCTORS GMBH
Inventors:
Christian Schmid, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Marks Klein, Karsten Heuser