Abstract: In a process for producing a ceramic housing (1), first of all a ceramic base body (4) comprising a ceramic base (2) and side parts (3) is produced. Then, a metal frame (7) is placed onto the ceramic base body (4) and a window (11) is soldered onto a side opening (6). After a photoactive semiconductor chip has been introduced into the ceramic base body (4), the ceramic housing (1) is closed off using a metal cover (12).

Abstract: A method of making an electrical connector comprises the steps of: forming an electrically conductive member having a body including an interface, the body having a longitudinal chamber therein; forming an electrically conductive pin; overmolding the interface with a first electrically insulating material; overmolding at least a part of the electrically conductive pin with a second electrically insulating material to form an overmolded electrically conductive pin; and inserting the overmolded electrically conductive pin into the longitudinal chamber.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1?x?yRExCEy)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0?x?0.5?y; 0<y<0.1 is used.

Abstract: A cable retainer (10) for a cable (12) having a longitudinal axis (11) and a given diameter has a first elongated body half (14) arrayed along the longitudinal axis (11) and having a first surface (18) and a second, oppositely disposed surface (20), the second oppositely disposed surface (20) having a first cable receiving section (22) therein with a depth at least one half of the given diameter. A second elongated body half (30) is arrayed along the longitudinal axis (11) and has a first area (34) and a second, oppositely disposed area (36) with a second cable receiving section (38) therein. A guide system (37) is provided for orienting the first elongated body half and the second elongated body half A fastener (40) is formed on the second elongated body half (30) and a receptor (42) for the fastener (40) is formed on the first elongated body half (14).

Abstract: A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

Abstract: A method of molding a ceramic vessel includes compressing a water-soluble powder, suspending the compressed powder shape in a mold, injecting a ceramic molding mixture into the mold, and dissolving the compressed powder by flushing the vessel with water. A core for making an arc discharge vessel that has a discharge chamber and two capillaries includes a molded core of the water-soluble powder having a shape of the discharge chamber, and preferably two capillary-forming pins extending from the molded core. An apparatus for removing the molded core that includes a water reservoir that preferably flushes water through the vessel and dissolves molded core.

Abstract: A stem and lamp capsule are connected together as an assembly using a retainer such that the stem is clamped to one end of the retainer and the capsule is clamped to the other end of the retainer. An oxidizable fuse is connected between leads of the capsule and electrical conductors of the stem. The retainer maintains the rigidity of the assembly and keeps a constant distance between the stem and the lamp capsule so that the repeatability and failure parameters of the fuse length can be maintained within acceptable tolerance.

Abstract: An LED lamp assembly may be formed from a support plate with a first side and a second side. A plurality of LED light sources are arranged and mounted on the first side of the support plate. An axially extending, light transmissive, light guide having an input end with an area sufficient to span the mounted LED light sources, is disposed adjacent the LED light sources to capture their emitted light. The light guide has at least one light deflector. The input end of the light guide is disposed to receive light emitted by the LED light sources and to conduct such light axially through the light guide to the deflector for projection sideways at an angle to the axis so as to appear s if the deflecting surface is a light source.

Abstract: An LED lamp and a method of making an LED lamp in which the lamp includes a heat conductive post with a base and a top, an insulative body within the post that includes plural wireways and plural electrical leads that each extend through a different one of the wireways and whose ends emerge from the top and the base of the post, a head with plural LED assemblies on the top of the post, and a circuit board for the LED assemblies at the base of the post, the leads being connected to respective LED assemblies and to the circuit board. During manufacture, the leads are mounted in the wireways of the insulative body and the assembled body is inserted into the post.

Abstract: The invention relates to a lamp base having fastening means for a lamp vessel, having a base part that consists of an electrically insulating material and that is equipped with at least two first electric contacts that serve the power supply of at least one luminous means, wherein said base part has at least two second electric contacts, in each case one of said second electric contacts being connected in an electrically conducting fashion to in each case one of said first electric contacts.

Abstract: An acidic solution can be used to dissolve undesirable impurity phases in UV-emitting SrB4O7:Eu phosphors that reduce the UV emission intensity of said phosphor. In particular, the impurity phase, SrB6O10:Eu, is no longer detected after treating the phosphor with an acid washing process. The phosphors after acid washing are shown to have improved UV emission intensity without greatly increasing the mean particle size.

Abstract: The present invention uses a post-sinter-HIP anneal to increase the total transmittance of ceramic discharge vessels comprised of a submicron-grained alumina doped with MgO. After the anneal, the submicron-grained alumina discharge vessels have high values of both total and in-line transmittance, and are thus suitable for use in focused-beam, short-arc lamps. In particular, the total transmittance of the discharge vessel is increased to greater than 92% in the wavelength range from about 400 nm to about 700 nm.

Abstract: An LED light source has a housing having a base. A hollow core projects from the base and is arrayed about a longitudinal axis. A printed circuit board is positioned in the base at one end of the hollow core and has a plurality of LEDs operatively fixed thereto about the center thereof. In a preferred embodiment of the invention the hollow core is tubular and the printed circuit board is circular. A light guide with a body that, in a preferred embodiment, is cup-shaped as shown in FIGS. 2 and 4a, has a given wall thickness “T”. The light guide is positioned in the hollow core and has a first end in operative relation with the plurality of LEDs and a second end projecting beyond the hollow core. The thickness “T” is at least large enough to encompass the emitting area of the LEDs that are employed with it.

Abstract: The invention relates to a semiconductor component comprising surface metallization and having at least one semiconductor body (3) and a package base body (2) on whose surface conductor path structures (7) are formed by means of surface metallization. A subregion of the conductor path structure (7) constitutes the solder connections of the semiconductor component. The solder connections (1) are combined to form rows, the individual rows of solder connections being arranged at a very small, predetermined spacing from one another.

Abstract: A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least one cavity via which a plurality of mesas is fashioned at the boundary between carrier substrate and thin-film layer is fashioned in the active thin-film layer proceeding from the carrier substrate.

Abstract: A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III–V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.

Abstract: A housing accommodating a semiconductor chip is set out. The housing and chip may be used for sending and/or receiving radiation. Popular applications of the housing may be in light emitting diodes. The housing includes a conductor strip that is punched into two electrically isolated portions. The housing further includes a cavity extending inwards from the top of the housing. The conductor portions include respective areas that are exposed at the bottom of the cavity. The semiconductor chip is bonded to one of the exposed areas and a wire bonds the chip to the second exposed area. The conductor portions also terminate in exposed electrodes, which allow for electrical connection of the chip with external devices. A window is formed in the cavity and the walls of the housing that form the cavity may be made of a reflective material. The electrodes remain unexposed to the window but for any residual areas about the chip and bonding wire within the first and second exposed areas.

Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

Abstract: The leachability of tungsten in an aqueous medium may be suppressed by combining tungsten metal with a metal oxide or metal salt that will form an insoluble tungsten-containing compound when the mixture is brought into contact with an aqueous medium. The additive is preferably present in an amount from about 1 weight percent (wt. %) to about 10 weight percent of the tungsten of the tungsten. Preferred additives are lead oxide and calcium sulfate.

Abstract: A method of bonding two ceramic parts to each other includes the steps of preparing a water-based slurry from Al2O3 powder and Y(NO3)3 solution in amounts that yield a eutectic compound of Al2O3 and Y2O3 when heated, placing the slurry in liquid, solid or gaseous form in direct contact with two ceramic parts that are to be bonded to each other, and heating the slurry to a temperature that bonds the two ceramic parts to each other. The method is particularly useful to join two ceramic parts where one is comprised of polycrystalline alumina and the other is comprised of one of single crystal alumina and polycrystalline alumina, such as an arc discharge vessel for a high intensity discharge lamp.