Abstract: An asymmetric RF switch for micro or millimeter waves, with each shunt or passthrough stack having two or more series FETs of approximately same channel width. A first lowest loss path, having only transmission line, passing through a second node, between common and first selectable ports. A second path, between the common and second selectable ports, passing through the second node, a passthrough stack, and a first node. Isolating the second selectable port from the first path by an on state of a second shunt stack connected to the first node, and an off state of the passthrough stack. Isolating the first selectable port from the second path by having an on state of the first shunt stack, or a path length, between the second node and the ground of a first shunt stack coupled to the second node, one quarter the wavelength of signals over the second path.