Patents Assigned to OVONYX MEMORY TECHNOLOGY, INC.
  • Resistive memory architectures with multiple memory cells per access device
    Patent number: 10424729
    Abstract: A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: September 24, 2019
    Assignee: Ovonyx Memory Technology, Inc.
    Inventors: Jun Liu, Michael P. Violette
  • Devices and methods to program a memory cell
    Patent number: 10262735
    Abstract: Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: April 16, 2019
    Assignee: OVONYX MEMORY TECHNOLOGY, INC.
    Inventors: Umberto Di Vincenzo, Carlo Lisi