Abstract: A pattern inspection apparatus includes a light source, a detector, and an inspection unit. The light source is configured to emit light toward an inspection target including stacked silicon substrates. The light has a wavelength band that is greater than or equal to 1.2 micrometers and less than or equal to 5.0 micrometers. The detector is configured to detect transmitted light of the inspection target or reflected light of the inspection target out of the light emitted from the light source. The transmitted light is light transmitted through the inspection target. The reflected light is light reflected by the inspection target. The inspection unit is configured to perform pattern inspection on the basis of a detection result obtained by the detector.

Abstract: A laser light source for a photoemission electron microscope for emitting a coherent light includes: a first laser light source configured to emit a continuous wave coherent light; an optical resonator including an optical path in which the continuous wave coherent light is configured to circulate and including a non-linear optical element disposed on the optical path; and a quasi-continuous wave light source configured to emit a quasi-continuous wave coherent light having a wavelength shorter than that of the continuous wave coherent light and having a near rectangular output waveform. When the quasi-continuous wave coherent light is incident on the non-linear optical element from outside the optical resonator while the continuous wave coherent light is entering the optical resonator to circulate in the optical path, the coherent light having a wavelength shorter than that of the quasi-continuous wave coherent light is emitted from the non-linear optical element.

Abstract: A pattern inspection apparatus includes a light source, a detector, and an inspection unit. The light source is configured to emit light toward an inspection target including stacked silicon substrates. The light has a wavelength band that is greater than or equal to 1.2 micrometers and less than or equal to 5.0 micrometers. The detector is configured to detect transmitted light of the inspection target or reflected light of the inspection target out of the light emitted from the light source. The transmitted light is light transmitted through the inspection target. The reflected light is light reflected by the inspection target. The inspection unit is configured to perform pattern inspection on the basis of a detection result obtained by the detector.

Abstract: In one embodiment, the present disclosure provides a deep ultraviolet laser generation device 1000 having a first laser source 100 at a first wavelength between 1.87 ?m and 2.1 ?m, a second laser source 200 at a second wavelength between 1.53 ?m and 1.57 ?m, a nonlinear wavelength conversion element 3 for generating near-infrared light 31 at a wavelength between 841 nm and 899 nm through a sum-frequency mixing (SFM) process, a nonlinear wavelength conversion element 4 for generating blue light 41 at a wavelength between 420 nm and 450 nm from the near-infrared light through a second harmonic generation (SHG) process, and a third nonlinear wavelength conversion element 5 for generating deep ultraviolet light 51 at a wavelength between 210 nm and 225 nm from the blue light, through another SHG process.

Abstract: A laser-diode pumped solid-state laser apparatus comprises at least one laser diode producing a pumping laser light, and at least one laser light generator including a monocrystalline substance doped with a dopant element and pumped with the pumping laser light from at least one laser diode, the monocrystalline substance containing the dopant element with a concentration profile such that the dopant element increases a concentration thereof in a direction perpendicular to a laser oscillation direction gently in the form of a slope from a near zero concentration.

Abstract: A ferroelectric material in which the refractive index change can be induced by irradiation with light at two different wavelengths without performing a reduction treatment or doping impurities. The ferroelectric material of the invention in which the refractive index change is induced by irradiation with light at two different wavelengths is a lithium tantalate single crystal with the composition of Li2O/(Li2O+Ta2O5)=0.4966 to 0.4995. Preferably, the ferroelectric material is a lithium tantalate single crystal with the composition of Li2O/(Li2O+Ta2O5)=0.4974 to 0.4989. Preferably, the infrared absorption coefficient in the [OH] stretching mode falls within a range of 0 cm−1 to 0.15 cm−1 (0 cm−1 and 0.15 cm−1 are included in the range).