Abstract: A cost effective and environmentally sound method for quickly removing liquid from surfaces of a substrate under manufacture without leaving behind substantial residue (e.g., silicon elements from the substrate, commonly known in the field as “water marks”). The process includes first providing a substrate (e.g., a semiconductor wafer, glass flat panel, or disc media), which has undergone one or more liquid-based processes (e.g., cleaning, scrubbing, rinsing, etc.). An upper surface and a lower surface of the substrate are then subjected to vacuum suction, thereby removing liquid thereon. An apparatus for removing liquid from surfaces of a substrate is also provided. The apparatus includes a plurality of vacuum application members configured for applying vacuum suction to surfaces of a substrate, thereby removing liquid therefrom.

Abstract: A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Abstract: A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Abstract: A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Abstract: A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Abstract: A cost effective and environmentally sound method for quickly removing liquid from surfaces of a substrate under manufacture without leaving behind substantial residue (e.g., silicon elements from the substrate, commonly known in the field as “water marks”). The process includes first providing a substrate (e.g., a semiconductor wafer, glass flat panel, or disc media), which has undergone one or more liquid-based processes (e.g., cleaning, scrubbing, rinsing, etc.). An upper surface and a lower surface of the substrate are then subjected to vacuum suction, thereby removing liquid thereon. An apparatus for removing liquid from surfaces of a substrate is also provided. The apparatus includes a plurality of vacuum application members configured for applying vacuum suction to surfaces of a substrate, thereby removing liquid therefrom.

Abstract: A cost effective and environmentally sound method for quickly removing liquid from surfaces of a substrate under manufacture without leaving behind substantial residue (e.g., silicon elements from the substrate, commonly known in the field as “water marks”). The process includes first providing a substrate (e.g., a semiconductor wafer, glass flat panel, or disc media), which has undergone one or more liquid-based processes (e.g., cleaning, scrubbing, rinsing, etc.). An upper surface and a lower surface of the substrate are then subjected to vacuum suction, thereby removing liquid thereon. An apparatus for removing liquid from surfaces of a substrate is also provided. The apparatus includes a plurality of vacuum application members configured for applying vacuum suction to surfaces of a substrate, thereby removing liquid therefrom.

Abstract: A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

Abstract: A cost effective and environmentally sound method for quickly removing liquid from surfaces of a substrate under manufacture without leaving behind substantial residue (e.g., silicon elements from the substrate, commonly known in the field as “water marks”). The process includes first providing a substrate (e.g., a semiconductor wafer, glass flat panel, or disc media), which has undergone one or more liquid-based processes (e.g., cleaning, scrubbing, rinsing, etc.). An upper surface and a lower surface of the substrate are then subjected to vacuum suction, thereby removing liquid thereon. An apparatus for removing liquid from surfaces of a substrate is also provided. The apparatus includes a plurality of vacuum application members configured for applying vacuum suction to surfaces of a substrate, thereby removing liquid therefrom.

Abstract: Embodiments in accordance with the present invention provide methods and apparatuses for heating a substrate with radiation during processing of substrates. Radiation in the radio or microwave portion of the electromagnetic spectrum is applied to a substrate housed within a processing chamber to promote desirable chemical reactions involving the substrate. Processing in accordance with embodiments of the present invention may utilize pressurization of the processing chamber in conjunction with the application of microwave, RF, IR, or UV radiation, or electromagnetic induction, to heat the substrate or a component of the processing chemistry present within the chamber. Alternative embodiments of the present invention may use combinations of these energy types for more effective processing. For example, UV radiation may be introduced into the chamber in conjunction with microwave heating in order to generate reactive species from the processing chemistry.

Abstract: A method and apparatus for removing materials from a substrate contained in a closed, pressurized processing vessel. An exemplary method includes the steps of inserting a substrate to be processed into the processing vessel, closing the processing vessel gas-tight, and then pressurizing the processing vessel. A pressurized processing solution is introduced to the processing vessel while the processing vessel is maintained under pressure. The substrate is exposed to the processing solution, so that a processing step ensues and the desired material is removed from the substrate by reaction with the pressurized processing fluid. The processing is performed at greater than atmospheric pressure to maintain a high concentration of active components of the processing solution by increasing the solubility of active solution components, and to inhibit evaporation of volatile components of the processing solution.

Abstract: A bath system for processing semiconductor wafers with an efficient and uniform delivery of sonic energy to the semiconductor wafers. The bath system includes a container (e.g., a quartz container) configured for receiving at least one semiconductor wafer (e.g., a 300 mm diameter semiconductor wafer) and holding processing liquid. The container has two vertical sidewalls and two angled walls, with each of the two angled walls being disposed below one of the vertical sidewalls. The bath system also includes at least one sonic transducer attached to each of the two angled walls. These sonic transducers are arranged so that sonic energy emanating therefrom is directed across the at least one semiconductor wafer during processing. The system further includes at least one sonic transducer attached to each of the vertical sidewalls.

Abstract: A bath system for processing semiconductor wafers includes a container having walls with a sonic transducer mounted on the outside of one side wall which is oblique to the other side walls. The thickness of the one side wall permits sonic energy to pass therethrough to wafers held in a liquid bath. Liquid and gas are introduced into the housing from the bottom wall.

Abstract: A rectangular container having a divider at one end of the container. The divider separates the container into a large processing region and a second region from which the solvent fluid is drained from the container. The divider acts as a weir over which the solvent flows from the processing region into the second region. Contaminating particles which fall onto the surface of the solvent and are momentarily trapped by surface tension are quickly removed from the processing region by the overflow action into the second region.