Patents Assigned to Pallidus, Inc.
  • High purity SiOC and SiC, methods compositions and applications
    Patent number: 12291456
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: June 19, 2022
    Date of Patent: May 6, 2025
    Assignee: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Mark S. Land, Glenn Sandgren, Brian L. Benac
  • High purity polysilocarb derived silicon carbide powder
    Patent number: 12215031
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: February 4, 2025
    Assignee: Pallidus, Inc.
    Inventors: Andrew R. Hopkins, Ashish P. Diwanji, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • High purity polysilocarb materials, applications and processes
    Patent number: 12151940
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: November 26, 2024
    Assignee: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • POLYSILOCARB BASED SILICON CARBIDE MATERIALS, APPLICATIONS AND DEVICES
    Publication number: 20240343589
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Application
    Filed: November 20, 2023
    Publication date: October 17, 2024
    Applicant: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Andrew R. Hopkins, Walter J. Sherwood, Ashish P. Diwanji, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • Doped SiC and SiOC compositions and Methods
    Patent number: 12030819
    Abstract: Materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. Doped SiOC and SiC materials for providing semiconductor properties to SiC wafers, including p- and n-type properties.
    Type: Grant
    Filed: July 4, 2021
    Date of Patent: July 9, 2024
    Assignee: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • Vapor Deposition Apparatus and Techniques Using High Purity Polymer Derived Silicon Carbide
    Publication number: 20240190710
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SIC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
    Type: Application
    Filed: June 26, 2023
    Publication date: June 13, 2024
    Applicant: Pallidus, Inc.
    Inventor: Mark S. Land
  • ELECTROCHEMICAL SYSTEMS AND METHODS FOR FINISHING SiC WAFERS
    Publication number: 20240071743
    Abstract: Methods and systems for the electrochemical finishing of SiC wafers. Embodiments of these methods use an applied electrical bias, an electrolytic oxidant removal solution and light to remove raised surface features and imperfections of an SiC wafer.
    Type: Application
    Filed: March 28, 2023
    Publication date: February 29, 2024
    Applicant: Pallidus, Inc.
    Inventors: Mark Land, Darren Hansen, Victor Torres, Robert Mervich, Thomas Kegg
  • Polysilocarb based silicon carbide materials, applications and devices
    Patent number: 11820666
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: August 7, 2021
    Date of Patent: November 21, 2023
    Assignee: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Andrew R. Hopkins, Walter J. Sherwood, Ashish P. Diwanji, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide
    Patent number: 11685660
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: June 27, 2023
    Assignee: Pallidus, Inc.
    Inventor: Mark S. Land
  • SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME
    Publication number: 20230167583
    Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
    Type: Application
    Filed: July 9, 2022
    Publication date: June 1, 2023
    Applicant: Pallidus, Inc.
    Inventors: Darren Hansen, Douglas Dukes, Mark Loboda, Mark Land, Victor Torres, Juan Carlos Rojo
  • SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME
    Publication number: 20230167582
    Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
    Type: Application
    Filed: July 9, 2022
    Publication date: June 1, 2023
    Applicant: Pallidus, Inc.
    Inventors: Douglas Dukes, Darren Hansen, Mark Loboda, Mark Land, Victor Torres, Juan Carlos Rojo
  • SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME
    Publication number: 20230167580
    Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
    Type: Application
    Filed: July 9, 2022
    Publication date: June 1, 2023
    Applicant: Pallidus, Inc.
    Inventors: Douglas Dukes, Darren Hansen, Mark Loboda, Mark Land, Victor Torres, Juan Carlos Rojo
  • High Purity SiOC and SiC, Methods Compositions and Applications
    Publication number: 20230090632
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Application
    Filed: June 19, 2022
    Publication date: March 23, 2023
    Applicant: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Mark S. Land, Glenn Sandgren, Brian L. Benac
  • HIGH PURITY POLYSILOCARB MATERIALS, APPLICATIONS AND PROCESSES
    Publication number: 20230089735
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Application
    Filed: March 7, 2022
    Publication date: March 23, 2023
    Applicant: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • High purity SiOC and SiC, methods compositions and applications
    Patent number: 11365124
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: June 21, 2022
    Assignee: Pallidus, Inc.
    Inventors: Mark S. Land, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Brian L. Benac
  • POLYSILOCARB BASED SILICON CARBIDE MATERIALS, APPLICATIONS AND DEVICES
    Publication number: 20220169518
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Application
    Filed: August 7, 2021
    Publication date: June 2, 2022
    Applicant: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Andrew R. Hopkins, Walter J. Sherwood, Ashish P. Diwanji, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • METHODS OF PROVIDING HIGH PURITY SiOC AND SiC MATERIALS
    Publication number: 20220162128
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Application
    Filed: May 24, 2021
    Publication date: May 26, 2022
    Applicant: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • PRESSED AND SELF SINTERED POLYMER DERIVED SiC MATERIALS, APPLICATIONS AND DEVICES
    Publication number: 20220002207
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Application
    Filed: July 4, 2021
    Publication date: January 6, 2022
    Applicant: Pallidus, Inc.
    Inventors: Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • Polysilocarb based silicon carbide materials, applications and devices
    Patent number: 11091370
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: August 17, 2021
    Assignee: Pallidus, Inc.
    Inventors: Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Mark S. Land, Brian L. Benac
  • Pressed and self sintered polymer derived SiC materials, applications and devices
    Patent number: 11053167
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: July 6, 2021
    Assignee: Pallidus, Inc.
    Inventors: Glenn Sandgren, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Mark S. Land, Brian L. Benac