Abstract: Methods and systems for the electrochemical finishing of SiC wafers. Embodiments of these methods use an applied electrical bias, an electrolytic oxidant removal solution and light to remove raised surface features and imperfections of an SiC wafer.
Type:
Application
Filed:
March 28, 2023
Publication date:
February 29, 2024
Applicant:
Pallidus, Inc.
Inventors:
Mark Land, Darren Hansen, Victor Torres, Robert Mervich, Thomas Kegg
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Grant
Filed:
August 7, 2021
Date of Patent:
November 21, 2023
Assignee:
Pallidus, Inc.
Inventors:
Douglas M. Dukes, Andrew R. Hopkins, Walter J. Sherwood, Ashish P. Diwanji, Glenn Sandgren, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
Type:
Application
Filed:
July 9, 2022
Publication date:
June 1, 2023
Applicant:
Pallidus, Inc.
Inventors:
Douglas Dukes, Darren Hansen, Mark Loboda, Mark Land, Victor Torres, Juan Carlos Rojo
Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
Type:
Application
Filed:
July 9, 2022
Publication date:
June 1, 2023
Applicant:
Pallidus, Inc.
Inventors:
Douglas Dukes, Darren Hansen, Mark Loboda, Mark Land, Victor Torres, Juan Carlos Rojo
Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
Type:
Application
Filed:
July 9, 2022
Publication date:
June 1, 2023
Applicant:
Pallidus, Inc.
Inventors:
Darren Hansen, Douglas Dukes, Mark Loboda, Mark Land, Victor Torres, Juan Carlos Rojo
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Application
Filed:
June 19, 2022
Publication date:
March 23, 2023
Applicant:
Pallidus, Inc.
Inventors:
Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Mark S. Land, Glenn Sandgren, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Application
Filed:
March 7, 2022
Publication date:
March 23, 2023
Applicant:
Pallidus, Inc.
Inventors:
Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Grant
Filed:
March 20, 2020
Date of Patent:
June 21, 2022
Assignee:
Pallidus, Inc.
Inventors:
Mark S. Land, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Application
Filed:
August 7, 2021
Publication date:
June 2, 2022
Applicant:
Pallidus, Inc.
Inventors:
Douglas M. Dukes, Andrew R. Hopkins, Walter J. Sherwood, Ashish P. Diwanji, Glenn Sandgren, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Application
Filed:
May 24, 2021
Publication date:
May 26, 2022
Applicant:
Pallidus, Inc.
Inventors:
Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Application
Filed:
July 4, 2021
Publication date:
January 6, 2022
Applicant:
Pallidus, Inc.
Inventors:
Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Grant
Filed:
September 24, 2015
Date of Patent:
August 17, 2021
Assignee:
Pallidus, Inc.
Inventors:
Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Grant
Filed:
June 17, 2019
Date of Patent:
July 6, 2021
Assignee:
Pallidus, Inc.
Inventors:
Glenn Sandgren, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Grant
Filed:
September 24, 2015
Date of Patent:
May 25, 2021
Assignee:
Pallidus, Inc.
Inventors:
Douglas M. Dukes, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Glenn Sandgren, Mark S. Land, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Application
Filed:
March 20, 2020
Publication date:
January 14, 2021
Applicant:
Pallidus, Inc.
Inventors:
Mark S. Land, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Grant
Filed:
May 12, 2017
Date of Patent:
March 24, 2020
Assignee:
Pallidus, Inc.
Inventors:
Mark S. Land, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Brian L. Benac
Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Type:
Application
Filed:
June 17, 2019
Publication date:
January 9, 2020
Applicant:
Pallidus, Inc.
Inventors:
Glenn Sandgren, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Mark S. Land, Brian L. Benac