Abstract: An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentration which reduces with depth into the substrate. The thyristor is useful for protecting sensitive electrical equipment from transient surges.
Abstract: A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
Type:
Grant
Filed:
April 4, 2005
Date of Patent:
December 29, 2009
Assignee:
Pan Jit Americas, Inc.
Inventors:
Michael Kountz, George Engle, Steven Evers
Abstract: A method of forming a film on a substrate. In accordance with the invention, an adhesion layer is formed on the substrate. The adhesion layer is chemically bonded to the substrate and has a textured surface. The film is then formed on the textured surface of the adhesion layer.
Type:
Grant
Filed:
April 4, 2005
Date of Patent:
January 1, 2008
Assignee:
Pan Jit Americas, Inc.
Inventors:
Michael Kountz, Randy Olsen, Michael Adamson
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