Abstract: A power line communication apparatus is provided with an auto gain detector that detects a gain fluctuation of an AGC (Auto Gain Control) circuit that automatically adjusts a gain of a received signal; a retry ratio calculator that calculates a ratio of retry based on output from an ARQ (Automatic Repeat request) unit that detects an error in the received data and issues a repeat request; and a transmission rate calculator that calculates a transmission rate based on output from a channel estimation unit that calculates a CNR so as to estimate a transmission status. A display displays a transmission status, including the detected AGC noise fluctuation, retry ratio, transmission rate and the like.

Abstract: Input transistors have sources which are connected to a first input reference node and gates to which a pair of input signals are input. Input-side voltage relaxing transistors have sources connected to drains of the pair of input transistors and gates connected to a second input reference node. Output-side voltage relaxing transistors have sources connected to output nodes, gates connected to a first output reference node, and drains connected to drains of the input-side voltage relaxing transistors. First and second inverter circuits are in correspondence with the output nodes, and are connected between second and third output reference nodes. Each of the first and second inverter circuits also supplies a voltage at one of the second and third output reference nodes to its corresponding one of the output nodes, depending on a voltage at its non-corresponding one of the output nodes.

Abstract: An object of the invention is to provide an optical recording medium and an optical information device that enable to improve the quality of a servo signal and a reproduction signal.

Abstract: A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.