Abstract: The present invention relates to a thermoelectric device 100A comprising a layered structure comprising a first layer 106, a first electrical connector 102, a second electrical connector 104, and a second layer 108 being different from the first layer 106, where the first layer comprises a material having the stoichiometric formula Zn4Sb3 (zinc antimonide)and the second layer 108 comprises Zn (zinc). The first layer 106 is being placed between the first and second electrical connector 102, 104, and the second layer 108 is placed between the first layer 106 and the first electrical connector 102. By having a second layer 108 comprising Zn the negative effects of electromigration of Zn may be overcome, since Zn may emanate from the foil and refill Zn depleted regions in the first layer. In a particular embodiment the second layer is a foil. In another particular embodiment, the first layer is doped with an element such as magnesium.