Abstract: There is provided a method of producing an electronic device precursor, in particular a method which comprises forming ohmic contacts on the substrate, each in contact with an edge portion of a dielectric-material-capped graphene layer structure, and coating the contacts, and at least one region of the capped structure, with a further dielectric material. The present invention also provides an electronic device precursor comprising a dielectric-material-capped graphene layer structure. The electronic device precursor is preferably for a Hall effect sensor.

Abstract: A transducer comprising a primary element comprising a magnet configured to provide a magnetic field within a magnetic zone, the magnetic field extending in a magnetic field direction; a secondary element comprising a first graphene sheet located within the magnetic zone; a static portion; and a rotating portion configured to rotate about an axis of rotation relative to the static portion. The rotating portion comprises a first one of a set comprising the primary element and the secondary element; and wherein the static portion comprises a second one of the set; and wherein an axis of rotation of the rotating portion is such that: in a first position of the static portion relative to the rotating portion, the first graphene sheet lies in a first plane that is parallel to the magnetic field direction; and in a second position of the static portion relative to the rotating portion, the first graphene sheet lies in an offset plane that is at an angle to the first plane about the axis of rotation.

Abstract: The present invention provides a graphene-containing laminate comprising. in order: a substrate: a graphene layer structure: a first metal oxide layer formed of a first metal oxide, wherein the first metal oxide is a transition metal oxide: and a second metal oxide layer formed of a second metal oxide: wherein the first metal oxide layer has a thickness of from 0.1 nm to 5 nm; and wherein the first metal oxide layer has a work function of 5 eV or more.

Abstract: The present invention relates to a method of forming a graphene-containing laminate, the method comprising: providing a first graphene layer structure on a substrate; forming a first metal oxide layer on the graphene layer structure by depositing and then oxidising a layer of metal; forming a second metal oxide layer on the first metal oxide layer; and forming a second graphene layer structure on the second metal oxide layer by CVD.

Abstract: A magnetoresistive sensor is provided. The magnetoresistive sensor comprises a substrate having a layer structure thereon. The layer structure comprises a lower layer, and an upper layer. The lower layer is provided on the substrate, wherein the lower layer comprises one or more graphene layers which extend across the lower layer. The upper layer is provided on the lower layer and formed of a dielectric material. The lower and upper layers of the layer structure share one or more continuous edge surfaces.

Abstract: There is provided a graphene sensor, preferably a graphene biosensor, comprising: a graphene layer structure provided on a non-metallic surface of a substrate, the graphene layer structure having an exposed, functionalised sample surface for receiving a sample for testing; first and second electrical contacts provided in contact with the graphene layer structure, and arranged on opposite sides of the functionalised sample surface; wherein each electrical contact is separated from the functionalised sample surface by an adjacent metal oxide layer, and wherein each electrical contact and adjacent metal oxide layer are capped with a passivating layer, whereby a sample for testing applied to the sample surface cannot contact the electrical contacts; and wherein the functionalised sample surface is devoid of photoresist.

Abstract: There is provided a transistor comprising: a graphene layer structure provided on a non-metallic surface of a substrate, the graphene layer structure having an insulating cap; a source contact provided in contact with a first edge of the graphene layer structure; an insulator provided in contact with an opposite, second edge of the graphene layer structure; a drain contact provided in contact with the insulator, whereby there is a distance of least separation between the drain contact and the graphene layer structure along the second edge of the graphene layer structure and through the insulator; and a gate contact provided (i) over the graphene layer structure and separated therefrom by the insulating cap and/or (ii) under the graphene layer structure and separated therefrom by substrate.

Abstract: The present invention relates to a method of forming a material on a graphene layer structure 5 for injecting charge into, or extracting charge out of, the graphene layer structure 5, the method comprising: providing a graphene layer structure 5 having one or more first portions 25 on a non-metallic substrate 10, said one or more first portions 25 having one or more surface defects comprising excess out-of-plane material 15; plasma etching the one or more first portions 25 of the graphene layer structure 5 to remove the out-of-plane material 15; depositing a material 30 for injecting charge into, or extracting charge out of, the graphene layer structure 5 onto the one or more plasma-etched first portions 25.

Abstract: Methods of providing an air- and/or moisture-barrier coating on at least a portion of a two-dimensional material are described. In particular, the methods provide an improved approach for providing a doped two-dimensional material, preferably graphene, on a substrate wherein at least a portion of the two-dimensional material is coated with an air- and/or moisture-barrier coating that comprises an inorganic oxide, fluoride or sulfide. Two-dimensional materials provided with an air- and/or moisture impermeable inorganic oxide, fluoride or sulfide coating and an electronic device comprising the same are also described.

Abstract: A method of field mapping a cell under load is provided. The method comprises the steps of: providing a cell; providing a Hall effect sensor comprising a graphene conductor for measuring a magnetic field; positioning the Hall effect sensor at a first position adjacent a face of the cell; applying a load to the cell; and measuring an output of the Hall effect sensor.

Abstract: The present invention relates to methods for the growth of a graphene layer structure on a substrate, wherein the substrate has a first surface for contacting a susceptor and a second surface for the formation of a graphene layer structure, wherein the substrate is a laminate wafer comprising a silicon support providing the first surface and a germanium layer providing the second surface: and opto-electronic devices obtainable therefrom.

Abstract: A transducer comprising a primary element comprising a magnet configured to provide a magnetic field within a magnetic zone, the magnetic field extending in a magnetic field direction; a secondary element comprising a first graphene sheet located within the magnetic zone; a static portion; and a rotating portion configured to rotate about an axis of rotation relative to the static portion. The rotating portion comprises a first one of a set comprising the primary element and the secondary element; and wherein the static portion comprises a second one of the set; and wherein an axis of rotation of the rotating portion is such that: in a first position of the static portion relative to the rotating portion, the first graphene sheet lies in a first plane that is parallel to the magnetic field direction; and in a second position of the static portion relative to the rotating portion, the first graphene sheet lies in an offset plane that is at an angle to the first plane about the axis of rotation.

Abstract: The present invention provides a method of manufacturing a graphene transistor 101, the method comprising: (a) providing a substrate having a substantially flat surface, wherein the surface comprises an insulating region 110 and an adjacent semiconducting region 105; (b) forming a graphene layer structure 115 on the surface, wherein the graphene layer structure is disposed on and across a portion of both the insulating region and the adjacent semiconducting region; (c) forming a layer of dielectric material 120 on a portion of the graphene layer structure which is itself disposed on the semiconducting region 105; and (d) providing: a source contact 125 on a portion of the graphene layer structure which is itself disposed on the insulating region 110; a gate contact 130 on the layer of dielectric material 120 and above a portion of the graphene layer structure which is itself disposed on the semiconducting region 105; and a drain contact 135 on the semiconducting region 105 of the substrate surface.

Abstract: There is provided a graphene substrate comprising: a graphene layer structure directly on a metal oxide layer, said metal oxide layer directly on a support layer; wherein the metal oxide layer has a thickness of less than 5 nm and is selected from the group consisting of Al2O3, HfO2, MgO, MgAl2O4, Ta2O5, Y2O3, ZrO2 and YSZ; and wherein the support layer is BN, AlN, GaN, SiC, diamond, or a combination thereof.

Abstract: The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C.

Abstract: There is provided a photodetector comprising: a substrate having a first channel of waveguide material embedded therein, the substrate and the waveguide material together providing a substantially flat upper surface: a first insulative layer on and across the upper surface: a graphene layer arranged on the first insulative layer and over the first channel of waveguide material: and at least two ohmic contacts, each provided in contact with the graphene layer and arranged on either side of the first channel of waveguide material: wherein the first insulative layer comprises silicon nitride and/or an oxide of one or more of aluminium, hafnium and magnesium.

Abstract: There is provided an electro-optic modulator comprising: a substrate having a first channel of waveguide material embedded therein, the substrate and the waveguide material together providing a substantially flat upper surface, a first insulative layer on and across the upper surface; a graphene layer arranged on the first insulative layer and over at least a first portion of the first channel of waveguide material; and a second insulative layer provided on and across the graphene layer; wherein the graphene layer provides a first electrode, and wherein a, preferably non-graphene, second electrode is either: (i) provided on the second insulative layer at least overlapping the first portion of the first channel of waveguide material, or (ii) provided within the substrate at least underlapping the first portion of the first channel of waveguide material.

Abstract: There is provided a method of manufacturing a transistor, the method comprising: (a) providing a substrate having a semiconductor surface; (b) providing a graphene layer structure on a first portion of the semiconductor surface, wherein the graphene layer structure has a thickness of n graphene monolayers, wherein n is at least 2; (c) etching a first portion of the graphene layer structure to reduce the thickness of the graphene layer structure in said first portion to from n?1 to 1 graphene monolayers; (d) forming a layer of dielectric material on the first portion of the graphene layer structure; and (e) providing: a source contact on a second portion of the graphene layer structure; a gate contact on the layer of dielectric material; and a drain contact on a second portion of the semiconductor surface of the substrate.

Abstract: The present invention pro ides a method of providing an electrical contact on a graphene surface, the method comprising: (i) providing a graphene layer structure comprising one or more graphene layers and having a polymer coating on a surface thereof; (ii) contacting one or more portions of the polymer coating with a conductive metal-containing composition comprising a solvent, wherein the polymer coating is soluble in the solvent: and (iii) volatilising the solvent to deposit the conductive metal on the surface of the graphene layer structure.

Abstract: A method of forming a graphene layer structure, the method comprising: providing a growth substrate having a growth surface; and forming a graphene layer structure on the growth surface by CVD; wherein the growth surface is formed of a material selected from the group consisting of: YSZ, MgAl2O4, YAIO3, CaF2 and LaF3.