Abstract: A novel method for producing a novel electro-optic electric-field sensor is disclosed. The resulting end product from this production method is a unique electro-optic electric-field sensor that includes thin film optical waveguides made from an electro-optic material on a low dielectric constant substrate. An optical circuit fabricated utilizing this production method may be a Mach-Zehnder interferometer or a micro-ring modulator. The low dielectric constant substrate allows the electric field to have high strength in the electro-optic thin film section, which in turn enables high sensitivity. In addition, for the Mach-Zehnder modulator sensor structure, phase matching is achieved between the RF or THz signal and the optical signal, resulting in an ultra-high-speed sensor for detection of Terahertz (THz) e-fields. An alternative design with a micro-ring electric-field sensor structure is also disclosed for high-spatial resolution electric-field sensing applications.

Abstract: A novel apparatus for bonding of two polished substrates includes a plasma source in a ultra-high vacuum (UHV) chamber and a wafer-guiding element to control and guide wafers in the UHV chamber, where after a plasma activation process the wafers are guided and pressed against each other to form a covalent bond between wafer surfaces. The plasma activation process involves deposition of mono-layer or sub-monolayer metallic atom on the surface of substrates. After deposition of metallic layers, a high-force actuation presses the wafers and forms a covalent bond between the wafers. Then, the bonded wafer pair is ion-sliced or thinned to form single crystalline optical thin film. An annealing process oxidizes the deposited metallic layers and produces optically-transparent single crystalline thin film. An optical waveguide may be fabricated by this thin film while utilizing an electro-optic effect to produce optical modulators and other photonic devices.

Abstract: A novel apparatus for bonding of two polished substrates includes a plasma source in a ultra-high vacuum (UHV) chamber and a wafer-guiding element to control and guide wafers in the UHV chamber, where after a plasma activation process the wafers are guided and pressed against each other to form a covalent bond between wafer surfaces. The plasma activation process involves deposition of mono-layer or sub-monolayer metallic atom on the surface of substrates. After deposition of metallic layers, a high-force actuation presses the wafers and forms a covalent bond between the wafers. Then, the bonded wafer pair is ion-sliced or thinned to form single crystalline optical thin film. An annealing process oxidizes the deposited metallic layers and produces optically-transparent single crystalline thin film. An optical waveguide may be fabricated by this thin film while utilizing an electro-optic effect to produce optical modulators and other photonic devices.

Abstract: A novel optical assembly apparatus for coupling optical energy and a related method for creating the novel optical assembly apparatus are disclosed. In one embodiment, the novel optical assembly apparatus includes a high-index contrast waveguide constructed on a semiconductor die or another base substrate with an aligned optical coupling section, a grating coupler etched onto a surface, a micro mirror with an acute angle relative to the surface, and a waveguide taper that narrows an optical beam width. A light ray entered into the optical coupling section is redirected by the micro mirror to form a perpendicular ray entry angle with the grating coupler. The grating coupler then efficiently couples the light ray with the waveguide taper, which in turn narrows the optical beam width. The light ray may originate from a semiconductor die or from an optical fiber, which is purposefully aligned with the high-index contrast waveguide.

Abstract: A novel electro-optic optical modulator device and a related method for creating the novel optical modulator device are disclosed. In one embodiment, the novel optical modulator comprises a high index contrast optical waveguide, a mesa region, electrical modulation electrodes, RF transmission lines, and interconnection layers. The high index contrast optical waveguide comprises an electro-optic slab core region and a high index ridge core region. A mesa section which includes the core regions can be formed, and electrical modulation electrodes are placed on etched sidewalls of the mesa section to achieve electro-optical index modulation of the electro-optic slab core region. The RF transmission lines include RF electrodes that connected to the electrical modulation electrodes. The interconnection layers connect the modulation electrodes with the RF electrodes by using etched vias. The novel optical modulator can also incorporate foldable modulation arms for poling in the electro-optic slab core region.