Patents Assigned to PAVAN CHATURVEDI
  • Patent number: 11335975
    Abstract: Proton conductive membrane includes a proton selective layer of 80-100% carbon with sp2 hybridization having a thickness of 0.3-100 nm, with 0-20% of hydrogen, oxygen, nitrogen and sp3 carbon; wherein the sp2 carbon is in a form of graphene-like material; the proton selective layer having a plurality of pores formed by any of 7, 8, 9 or 10 sp2 carbon cycles or a combination thereof, with the pores having an effective diameter of up to 0.6 nm; an ionomeric polymer layer on the proton selective layer. Total thickness of the proton conductive membrane is less than 50 microns. The ionomeric polymer is PFSA (perfluorinated sulfonic acid), PVP (polyvinylpyrrolidone) or PVA (poly vinyl alcohol) with iodide or bromide counterion dissolved inside. The graphene-like material is CVD graphene or reduced graphene oxide (rGO). A D to G Raman band ratio of the membrane is more than 0.1.
    Type: Grant
    Filed: June 21, 2020
    Date of Patent: May 17, 2022
    Assignees: NM DEVICES LLC, GENERAL GRAPHENE CORPORATION, PAVAN CHATURVEDI
    Inventors: Sergei Smirnov, Ivan Vlassiouk, Pavan Chaturvedi, Dhanraj Shinde