Abstract: A direct plasmonic photovoltaic cell (1) and a method of manufacturing such a photovoltaic cell is proposed. The photovoltaic cell (1) comprises: a first conductive substrate (2): a layer of a p-type semiconductor as a Hole Transporting Layer HTL (3): a layer of metal plasmonic nanoparticles (41. 42): a layer of an n-type semiconductor as an Electron Transporting Layer ETL (5); and a second conductive substrate (6). The HTL (3) is in direct physical contact with the first conductive substrate (2) and the second conductive substrate (6) is in direct physical contact with the ETL (5).
Type:
Application
Filed:
April 11, 2022
Publication date:
June 6, 2024
Applicant:
PEAFOWL PLASMONICS AB
Inventors:
Jacinto SÁ, Cristina PAUN, Fei PENG, Laia CAPDEVILA, Mohamed Ahmed QENAWY ABDELLAH
Abstract: A charge generating assembly for a direct plasmonic photovoltaic cell with increased overall efficiency, comprising a layer of an n-type semiconductor as an electron transporting layer (1) (ETL), a layer of metal plasmonic nanoparticles (2), an insulating layer (4) between the n-type semiconductor and the layer of metal plasmonic nanoparticles and a layer of a p-type semiconductor as a hole transporting layer (3) (HTL).