Abstract: An apparatus and method for determining the temperature of an object, such as a semiconductor wafer by measuring the physical change in a dimension of the semiconductor wafer is disclosed. This physical change is then correlated to the temperature using the coefficient of thermal expansion for the wafer.

Abstract: A method for selectively heating a film on a substrate. The film is provided with a different absorption characteristic for light than the absorption characteristic of the substrate. The specimen (combined film and substrate) is illuminated by light having a maximum intensity at a wavelength which will be substantially absorbed by the film and substantially not absorbed by the substrate.

Abstract: A method for rapidly curing a film on a substrate by selective heating, causing it to cure from the inside out. This is accomplished by illuminating the sample with a light source having a peak wavelength which will be primarily absorbed by the underlying substrate and is transparent to the overlying film. Thus the substrate will be selectively heated first by direct absorption of the radiation, and the film to be cured will in turn be heated by conduction from the substrate. In this way, the film will be cured from the interior interface to the surface, or from the inside-out.

Abstract: The present invention is an apparatus for calibrating a temperature feedback value in a water processing chamber to automatically compensate for variations in infrared emissions from a heated semiconductor wafer due to variations in composition and coatings from wafer to wafer. A calibration wafer with an imbedded thermocouple is used to generate a table relating actual wafer temperatures to power supplied to the heating chamber and infrared emissions detected by a pyrometer. A sample wafer of a batch to be processed is subsequently placed in the chamber at a known power level, and any difference between the detected infrared emission value and the value in the table is used to adjust the entire table according to a first predetermined formula or table. Before each wafer is processed, a known source of infrared light is reflected off the wafer and detected. The reflected light value is compared to a reflection measurement for the sample wafer.

Abstract: The present invention is a method and apparatus for calibrating a temperature feedback value in a wafer processing chamber to automatically compensate for variations in infrared emissions from a heated semiconductor wafer due to variations in composition and coatings from wafer to wafer. A calibration wafer with an imbedded thermocouple is used to generate a table relating actual wafer temperatures to power supplied to the heating chamber and infrared emissions detected by a pyrometer. A sample wafer of a batch to be processed is subsequently placed in the chamber at a known power level, and any difference between the detected infrared emission value and the value in the table is used to adjust the entire table according to a first predetermined formula or table. Before each wafer is processed, a known source of infrared light is reflected off the wafer and detected. The reflected light value is compared to a reflection measurement for the sample wafer.

Abstract: An long arc gas-discharge lamp for rapidly heating a semiconductor wafer. The spectral output of the lamp is specifically matched to the absorption characteristics of the particular semiconductor wafer being heating by choosing an appropriate gas or mixture of gases. The electrodes of the long arc lamp are separated by a distance greater than the largest dimension of the semiconductor wafer to insure that the entire wafer is illuminated at one time. In addition, the lamp has a high power density to raise the temperature of the semiconductor wafer to the required process temperature. Large diameter metal electrodes are used to conduct more heat from the ends of the lamp. The electrodes contain a low work function metal such as thorium oxide to increase the electron emission. The enclosing glass capillary has thin walls between the electrodes for improved heat dissipation. The glass capillary is cooled to carry the heat away from the lamp.

Abstract: Apparatus and a method for transferring one or more workpieces from a first location to a second location in an automated fashion. The apparatus includes a wafer transfer arm having a vacuum means at one end thereof for removable attachment to the underside of a workpiece to cause the workpiece to be moved from a first location to a second location. The transfer arm is coupled at the opposite end thereof to a post which is coupled to drive means for moving the arm in three degrees of freedom, namely along an X direction, along a Z direction and in a rotative direction. A reversible drive motor is provided for each degree of freedom and the motors are mounted on a carriage in a manner such that the motors can be simultaneously actuated under the control of a computerized control means. Thus, with a program coupled to the control means, the transfer arm can be made to perform a series of steps sequentially to move one or more workpieces from a first location, such as a wafer cassette, to a processing station.

Abstract: An improved high power (40,000 watt) high intensity arc discharge power supply which provides reliable, automatic ignition control and enables precise variation of lamp power in dual AC and DC modes of operation over an extended dynamic range from 400 watts to 40,000 watts. A capacitive boost circuit is provided to supply the high voltage necessary to ignite the lamp. Upon start-up, the voltage on a boost circuit capacitor is monitored by an ignition circuit which automatically enables the ignitor when the voltage is at the required level and switches the ignitor off when the lamp starts. After ignition the boost charging circuit is disabled and the power supply operates in a normal mode. The power supply operates on a three phase alternating voltage input through a three phase bridge, switches it through a drive transistor and then supplies it to an inductor. The signal is then supplied through an H-bridge commutator to the boost circuit, the ignitor and the arc lamp itself.