Abstract: The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient ?c, e.g., transverse effective linear E-O coefficient ?Tc more than 1100 pm/V and longitudinal effective linear E-O coefficient ?lc up to 527 pm/V, which results in a very low half-wavelength voltage Vl? below 200V and VT? below about 87V in a wide number of modulation, communication, laser, and industrial uses.

Abstract: The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient yc, e.g., transverse effective linear E-O coefficient yTc more than 1100 pm/V and longitudinal effective linear E-O coefficient ytc up to 527 pm/V, which results in a very low half-wavelength voltage Vtx below 200V and Vtx below about 87V in a wide number of modulation, communication, laser, and industrial uses.