Patents Assigned to Peregrine Seimconductor Corporation
  • Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
    Patent number: 5864162
    Abstract: A thin silicon layer transistor integrated with a resistor. The resistor is self-aligned and contiguous with the transistor and is also formed of the same thin silicon layer as the transistor. This structure is particularly suitable for an SRAM circuit in order to simplify processing steps and to conserve area on SOS designs.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: January 26, 1999
    Assignee: Peregrine Seimconductor Corporation
    Inventors: Ronald E. Reedy, Mark L. Burgener