Patents Assigned to PERFECT CRYSTALS LLC
  • COMPOSITE SEMIDCONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD
    Publication number: 20140001486
    Abstract: According to the present invention, a composite semiconductor substrate (1) for epitaxial growth of a compound semiconductor material (1) comprises a ceramic semiconductor support layer (4), and a single crystalline epitaxial layer (3) formed of the compound semi-conductor material on the ceramic semiconductor support layer.
    Type: Application
    Filed: March 14, 2012
    Publication date: January 2, 2014
    Applicants: PERFECT CRYSTALS LLC, OPTOGAN OY
    Inventors: Vladislav E. Bougrov, Maxim A. Odnoblyudov, Alexey Romanov, Vladimir Nikolaev