Abstract: A photosensor pixel includes a thin film transistor (TFT) and a metal-insulator-semiconductor (MIS) photodetector. The TFT includes a gate, a gate insulator layer, a semiconductor layer forming a channel region, a drain, and a source. The MIS photodetector includes a transparent conductor layer, a semiconductor layer including a photosensitive semiconductor, and an insulator layer between the transparent conductor layer and the semiconductor layer. The semiconductor layer of the MIS photodetector is connected to the source or the drain of the TFT, and the thickness of the insulator layer of the MIS photodetector is less than the thickness of the gate insulator layer of the TFT.

Abstract: A scintillator device includes a scintillator layer on a substrate and a foil layer that covers the scintillator layer. The foil layer overlaps an outer edge of the scintillator layer and is adhered to a portion of the substrate surrounding the scintillator layer to form at least part of a first moisture barrier between the scintillator layer and the surrounding environment. A sealant overlaps an outer edge of the foil layer onto a portion of the substrate surrounding the foil layer to form at least part of a second moisture barrier between the scintillator layer and the surrounding environment.

Abstract: A sensor array including sensor pixels is disclosed. A sensor pixel includes a detector and a readout circuit operatively coupled to the detector. The readout circuit includes at least one readout element formed from an amorphous metal oxide alloy semiconductor. Also disclosed is an image detector panel including a sensor array with sensor pixels arranged into rows and columns. The image detector panel includes a gate driver module configured to address rows of the sensor array, and a multiplexing module configured to select columns of the sensor array and multiplex signals from the sensor pixels. The gate driver module and the multiplexing module include elements formed from an amorphous metal oxide alloy semiconductor.

Abstract: A fingerprint sensor pixel and fingerprint imaging device are disclosed. A fingerprint sensor pixel includes a capacitive sensor and a readout circuit. The capacitance of the capacitive sensor changes in response to contact with a fingerprint. The readout circuit includes a first thin film transistor (TFT) used to convert the capacitance of the capacitive sensor to a representative current, a coupling capacitor used to capacitively couple a readout pulse to the gate of the said second TFT sharing the connection with the capacitive sensor pixel, and a second TFT used to reset the voltage of the capacitive sensor. Multiple fingerprint sensor pixels can be arranged in an array to form a fingerprint imaging device.

Abstract: Certain embodiments described herein are directed to devices and systems that can be used for direct and indirect detection of radiation such as X-rays. In certain examples, the device can include a modulator optically coupled to a sensor. In some examples, the modulator can be configured to switch between different states to provide an imaging signal in one state and a dosimetry signal in another state.

Abstract: A method for adaptive frame scanning for pulsed x-ray imaging comprising the steps of: scanning lines on an image detector sequentially; receiving an indication that radiation is about to begin; waiting a fixed delay after the indication is received; suspending scanning after the fixed delay has lapsed; and resuming scanning of lines on the detector upon receiving an indication that radiation has stopped. By monitoring for completion of a frame a predetermined frame delay can be added before commencing the next line scan to accommodate jitter in the radiation pulse timing.

Abstract: Certain embodiments described herein are directed to devices and systems that can be used for direct and indirect detection of radiation such as X-rays. In certain examples, the device can include a modulator optically coupled to a sensor. In some examples, the modulator can be configured to switch between different states to provide an imaging signal in one state and a dosimetry signal in another state.

Abstract: Certain embodiments described herein are directed to devices and systems that can be used for direct and indirect detection of radiation such as X-rays. In certain examples, the device can include a modulator optically coupled to a sensor. In some examples, the modulator can be configured to switch between different states to provide an imaging signal in one state and a dosimetry signal in another state.

Abstract: Certain embodiments described herein are directed to devices and systems that can be used for direct and indirect detection of radiation such as X-rays. In certain examples, the device can include a modulator optically coupled to a sensor. In some examples, the modulator can be configured to switch between different states to provide an imaging signal in one state and a dosimetry signal in another state.

Abstract: A method for adaptive frame scanning for pulsed x-ray imaging comprising the steps of: scanning lines on an image detector sequentially; receiving an indication that radiation is about to begin; waiting a fixed delay after the indication is received; suspending scanning after the fixed delay has lapsed; and resuming scanning of lines on the detector upon receiving an indication that radiation has stopped. By monitoring for completion of a frame a predetermined frame delay can be added before commencing the next line scan to accommodate jitter in the radiation pulse timing.