Abstract: A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: The present invention relates to a structure of an photosensor structure having improved optical properties by including a copper halide region, and a method of manufacturing the same. The photosensor structure includes a silicon semiconductor substrate and junctions formed in the silicon semiconductor substrate and having regions of at least three opposite polarities. The junctions may be arranged substantially vertically aligned with each other, and at least one of the junctions may be a junction of a copper halide region of a first polarity and a silicon region of a second polarity. Accordingly, the quantum efficiency is improved by the optical characteristics of the copper halide, and the effect of reducing the size of the manufactured photosensor can be obtained.

Abstract: A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.

Abstract: The present invention relates to a structure of an photosensor structure having improved optical properties by including a copper halide region, and a method of manufacturing the same. The photosensor structure includes a silicon semiconductor substrate and junctions formed in the silicon semiconductor substrate and having regions of at least three opposite polarities. The junctions may be arranged substantially vertically aligned with each other, and at least one of the junctions may be a junction of a copper halide region of a first polarity and a silicon region of a second polarity. Accordingly, the quantum efficiency is improved by the optical characteristics of the copper halide, and the effect of reducing the size of the manufactured photosensor can be obtained.

Abstract: The present invention relates to a quantum dot light emitting device, a light emitting device package, and a backlight unit including a quantum dot nanostructure composed of I-VII compounds. The quantum dot light emitting device included first and second electrodes, a light emitting layer including the quantum dot nanostructure, a hole injection layer, a hole transport layer, an electron injection layer and an electron transport layer. The light emitting device package includes a housing, a light emitting device and a light converter, and the light emitting device is disposed in the housing. The light converter is disposed on the light emitting device, and the quantum dot nanostructure may be dispersed therein. The backlight unit includes a light source having the quantum dot light emitting device or the light emitting device package, and a light guide plate uniformly dispersing the direction of light emitted from the light source.

Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.

Abstract: A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

Abstract: The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

Abstract: A high output and high speed electronic device having low cost and high productivity is disclosed. The copper halide semiconductor based electronic device, includes a substrate, a copper halide channel layer formed on the substrate, an insulating layer formed on the copper halide channel layer, a gate electrode formed on the insulating layer, a first n+copper halide layer formed on the copper halide channel layer to be disposed at a first side of the gate electrode, the first n+copper halide layer comprising n-type impurities, a drain electrode formed on the first n+copper halide layer, a second n+copper halide layer formed on the copper halide channel layer to be disposed at a second side of the gate electrode, which is opposite to the first side, the second n+copper halide layer comprising n-type impurities, and a source electrode formed on the second n+copper halide layer.

Abstract: A trasparent PN junction device and an electronic device using the PN junction device are provided. The PN junction device to achieve above objects of the invention includes a support substrate, a capper chloride (CuCl) thin film layer, a transparent electrode layer, a first electrode and a second electrode. The capper chloride thin film layer is formed on the supporting substrate and operates as a P-type semiconductor layer. The transparent electrode layer is formed on the capper chloride thin film layer and operates as an N-type semiconductor layer. The first electrode is formed on the capper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may include indium tin oxide (ITO) or indium zinc oxide (IZO).