Patents Assigned to PFC Device Corporation
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Patent number: 8618626Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: GrantFiled: October 12, 2010Date of Patent: December 31, 2013Assignee: PFC Device CorporationInventors: Kou-Liang Chao, Mei-Ling Chen, Tse-Chuan Su, Hung-Hsin Kuo
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Patent number: 8558315Abstract: A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.Type: GrantFiled: July 26, 2011Date of Patent: October 15, 2013Assignee: PFC Device CorporationInventors: Mei-Ling Chen, Hung-Hsin Kuo, Kou-Liang Chao
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Patent number: 8405184Abstract: A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.Type: GrantFiled: June 28, 2010Date of Patent: March 26, 2013Assignee: PFC Device CorporationInventors: Kou-Liang Chao, Hung-Hsin Kuo, Tse-Chuan Su, Mei-Ling Chen
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Publication number: 20120049287Abstract: A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.Type: ApplicationFiled: July 26, 2011Publication date: March 1, 2012Applicant: PFC DEVICE CORPORATIONInventors: Mei-Ling Chen, Hung-Hsin Kuo, Kou-Liang Chao
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Publication number: 20110084353Abstract: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.Type: ApplicationFiled: October 12, 2010Publication date: April 14, 2011Applicant: PFC DEVICE CORPORATIONInventors: Kou-Liang CHAO, Mei-Ling Chen, Tse-Chuan Su, Hung-Hsin Kuo
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Publication number: 20100327288Abstract: A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.Type: ApplicationFiled: June 28, 2010Publication date: December 30, 2010Applicant: PFC DEVICE CORPORATIONInventors: Kou-Liang CHAO, Hung-Hsin Kuo, Tse-Chuan Su, Mei-Ling Chen