Abstract: A backlight includes a waveguide with a plurality of light emitting diodes positioned in cavities in the back surface in a center region of the waveguide. The back surface of the waveguide can be tapered from the center region to the edges so that the edges are thinner than the center region. Additionally, with the light emitting diodes in the center region of the waveguide, as opposed to along the edges, the bezel may be eliminated or at least minimized in height, e.g., 1 mm or less. Additionally, multiple waveguides may be used and configured in a “V” shape to minimize the bezel.

Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.

Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

Abstract: The invention provides a light-emitting device and a method of illumination. The light-emitting device includes one or more semiconductor layers, a reflective bottom surface, and a top surface coupled to semiconductor layer. The semiconductor layers include an active region where a primary light is generated. The relative position of the top surface, the reflective bottom surface and the active region is adjusted to substantially transmit the primary light through the sides of the light-emitting device.