Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.
Type:
Grant
Filed:
December 14, 2007
Date of Patent:
April 8, 2014
Assignee:
Philips Lumileds Lighing Company LLC
Inventors:
Patrick N. Grillot, Rafael I. Aldaz, Deborah L. Coblentz, Anneli Munkholm, Hanmin Zhao