Abstract: An integrated circuit includes a serpentine conductor track extending through a plurality of conductor layers and having ends coupled to first and second circuit elements, the ends being in opposing outermost ones of the conductor layers. The serpentine conductor track can selectively be made to be (i) continuous and electrically couple the first and second circuit elements together or (ii) discontinuous so that the first and second conductor elements are not electrically coupled. In the latter case, the discontinuity can be formed in any one of the conductor layers and a bridging conductor track is further formed in that one conductor layer which is coupled to the serpentine conductor track and which bypasses either of the first and second circuit elements. This structure has the advantage that circuit changes can be made in any conductor layer.

Abstract: A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region.