Abstract: A method for making a multi-layered integrated circuit structure, includes depositing a methyl compound spin on glass layer over a substrate. The spin on glass layer is treated by plasma-deposition to form a SiO2 skin on the methyl compound spin on glass layer and then treated again by plasma-deposition to form a cap layer which adheres to the SiO2 skin.
Type:
Grant
Filed:
July 22, 1998
Date of Patent:
October 16, 2001
Assignee:
Philips Semiconductor Inc.
Inventors:
Rao V. Annapragada, Tekle M. Tafari, Subhas Bothra
Abstract: A method for making a multi-layered integrated circuit structure, includes depositing a methyl doped silicon oxide layer over a substrate. SiO2 skin is deposited on the methyl doped silicon oxide layer by decreasing the flow of CH3SiH3, increasing the flow of SiH4 and keeping the flow of H2O2 constant for a period of time. Finally, a cap layer is deposited which adheres to the SiO2 skin.
Abstract: An improved memory addressing system has a CPU having both an address bus and a multiplexed data/address bus. A reduced PIN out companion chip is coupled to the multiplexed data/address bus for decoding data and low order address information. Memory storage is coupled to a high order address bus for receiving a high order address from the CPU, and to the low order address bus and data bus for receiving decoded low order address and data information from the companion chip.