Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.

Abstract: A decoding method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the invention. The method includes: reading at least one memory cells by using at least one read voltage level to obtain a codeword; performing a parity check operation on the codeword by an error checking and correcting circuit to generate a syndrome sum corresponding to the codeword; and dynamically adjusting a first parameter used by the error checking and correcting circuit in a first decoding operation based on whether the syndrome sum is less than a first threshold value and performing the first decoding operation on the codeword by the error checking and correcting circuit by using the first parameter.

Abstract: A data writing method, a valid data identifying method and a memory storage apparatus using the same are provided. The method includes receiving first data; using a first programming mode to write first sub-data of the first data into a first physical programmed unit of at least a first memory sub-module of a plurality of memory sub-modules, wherein a size of each of the first sub-data is the same as a preset size; and using a second programming mode to write remaining sub-data of the first data into a second physical programmed unit of a second memory sub-module of the plurality of memory submodules, wherein the size of the remaining sub-data is less than the preset size, and the second memory sub-module is different from a third memory sub-module of the first memory submodules which is a last memory sub-module for writing the first sub-data.

Abstract: A bit tagging method, a memory control circuit unit and a memory storage device are provided. The method includes: reading first memory cells according to a first reading voltage to generate a first codeword and determining whether the first codeword is a valid codeword, and the first codeword includes X bits; if not, reading the first memory cells according to a second reading voltage to generate a second codeword and determining whether the second codeword is the valid codeword, and the second codeword includes X bits; and if the second codeword is not the valid codeword and a Yth bit in the X bits of the first codeword is different from a Yth bit in the X bits of the second codeword, recording the Yth bit in the X bits as an unreliable bit, and Y is a positive integer less than or equal to X.

Abstract: A phase-locked loop circuit calibration method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: receiving a first signal from a host system; generating a jitter signal by the memory storage device; generating a second signal according to the first signal and the jitter signal; performing a phase-lock operation on the second signal to generate a third signal by a phase-locked loop circuit; and detecting the third signal to calibrate an electronic parameter of the phase-locked loop circuit.

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: receiving a first command and performing a first operation corresponding to the first command; transmitting a completion message to a host system corresponding to a completion of the first operation; detecting command processing information; determining a transmission mode of an interruption message according to the command processing information; and transmitting the interruption message to the host system according to the transmission mode.

Abstract: A memory management method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage apparatus are provided. The rewritable non-volatile memory module includes a plurality of super physical units, and the super physical units at least include a plurality of good super physical units and a plurality of partial good super physical units. The method includes: receiving a host write command; selecting a first super physical unit set according a number rate of the good super physical units and the partial good super physical units, and the first super physical unit set includes a plurality of first good super physical units and at least one first partial good super physical unit selected from the super physical units according to the number rate; and writing data into the good physical erasing units of the first super physical unit set, in response to the host write command.

Abstract: The disclosure provides a memory management method, which includes: selecting at least one logical unit mapped to physical units programmed based on a first operating mode; determining a reference count according to a number of the selected logical unit; receiving a first write command; determining whether the reference count is greater than a threshold value; if the reference count is greater than the threshold value, programming first data into a first physical unit based on the first operating mode, and each memory cell in the first physical unit stores a first number of bit data; if the reference count is not greater than the threshold value, programming the first data into a second physical unit based on a second operating mode, and each memory cell in the second physical unit stores a second number of bit data, and the second number is greater than the first number.

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory management method includes: receiving a plurality of commands; detecting a power glitch; and sending a command sequence which instructs to perform a first operation according to a first command among the plurality of commands and ignoring a second command among the plurality of commands after the power glitch occurs.

Abstract: A memory management method, a memory control circuit unit and a memory storage device are provided. The method includes: performing a single-layer erasing operation on one of physical erasing units; performing a multi-layer erasing operation on another one of the physical erasing units; and performing a wear leveling operation based on the one and the another one of the physical erasing units, wherein the another one of the physical erasing units is performed the wear leveling operation first than the one of the physical erasing units.

Abstract: An integrated circuit and a code generating method are described. The integrated circuit includes a plurality of field effect transistors, a plurality of sense-amplifiers, and a processing circuit. Each field effect transistor is configured to represent an address in a mapping table and includes a source, a drain, a channel and a gate. Each sense-amplifier is connected to the drain and configured to sense an electric current from the drain and identify a threshold voltage of the corresponding field effect transistor. The processing circuit is configured to categorize each of the threshold voltages identified by the corresponding sense-amplifiers into a first state and a second state and mark the state of each of the threshold voltages at the corresponding address in the mapping table.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: determining whether to use a first programming mode or a second programming mode to program memory cells according to a first data amount and a second data amount; when the first data amount is greater than the second data amount, programming the memory cells by using the first programming mode; and when the first data amount is not greater than the second data amount, programming the memory cells by using the second programming mode.

Abstract: A memory management method, a memory storage device and a memory controlling circuit unit are provided. The method includes: defining a first data management rule for a first type physical unit and a second data management rule for a second type physical unit, and a data density of the first type physical unit is lower than the data density of the second type physical unit; if a first physical unit belongs to the first type physical unit, managing the first physical unit according to the first data management rule to make the data stored in the first physical unit conforming to a first reliability level; and if the first physical unit belongs to the second type physical unit, managing the first physical unit according to the second data management rule to make the data stored in the first physical unit conforming to a second reliability level.

Abstract: A trim command recording method, a memory control circuit unit and a memory storage device are provided. The method includes: receiving a write command from a host system; writing a data corresponding to the write command to a first physical programming unit of a first physical erasing unit in the plurality of physical erasing units; and when receiving a trim command from the host system, writing a trim command record corresponding to the trim command into a second physical programming unit of the first physical erasing unit.

Abstract: A wear leveling method for a rewritable non-volatile memory module, a memory control circuit unit, and a memory storage apparatus are provided. The rewritable non-volatile memory module includes a plurality of physical erasing units. The method includes: recording an operation value of each of the physical erasing units; recording a usage situation value of each of the physical erasing units; and selecting a first physical erasing unit and a second physical erasing unit from the physical erasing units according to the operation values of the physical erasing units and the usage situation values of the physical erasing units and copying valid data stored in the first physical erasing unit to the second physical erasing unit.

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: programming first data into a plurality of first memory cells in the rewritable non-volatile memory module, such that the programmed first memory cells have a plurality of states; sending a first single-stage read command sequence which indicates to read the programmed first memory cells by using a first read voltage level; obtaining first count information corresponding to the first read voltage level according to a read result corresponding to the first single-stage read command sequence; and adjusting the first read voltage level according to the first count information and default count information corresponding to the first read voltage level.

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.

Abstract: A decoding method which includes: storing first data into a buffer memory which includes a first buffer region and a second buffer region; copying decoding data in the second buffer region to the first buffer region; performing a first type decoding operation for the first data based on the copied decoding data in the first buffer region, where the copied decoding data is different from original decoding data corresponding to the first data; and outputting decoded data if the first type decoding operation is successful.

Abstract: A data accessing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit by using a first read voltage to obtain first data; reading the first physical programming unit by using a second read voltage to obtain second data; inputting a first state parameter corresponding to the first data and a second state parameter corresponding to the second data into a numerical calculation engine, and determining a third reading voltage for reading the first physical programming unit by the numerical calculation engine.

Abstract: A data protecting method, a memory control circuit unit and a memory storage device are provided. The method includes repeatedly reading data from a first physical programming unit of a first physical erasing unit during an initialization operation after the memory storage device is powered on, wherein the first physical programming unit is the last programmed physical programming unit before the memory storage device is powered off. The method also includes updating a logical-physical mapping table according to the first physical programming unit if a number of error bits of data read each time is not greater than an error bits amount threshold and a reading count of the first physical programming unit is greater than a predetermined count.