Abstract: A photodiode chip, a photodiode, and a method for controlling a wavelength of a photodiode are provided. The photodiode chip sequentially incudes, above a substrate, a grating layer and a ridge waveguide layer. The ridge waveguide layer includes multiple ridge waveguides. Each of the multiple ridge waveguides corresponds to one column of gratings in the multiple columns of gratings below. The grating layer includes multiple columns of gratings. At least two columns of gratings have different grating period pitches.

Abstract: Provided are a photoelectric chip, a manufacturing method and an installation method, which relate to the field of optical communication and transmission technologies. The chip is provided with a light-splitting groove (3), and the light-splitting groove (3) runs through an absorption layer (2) of the chip; the back of the chip is a light-entering side; the light-splitting groove (3) is configured to transmit and split out part (151) of incident light (15), and the other part (152) of the incident light (15) enters the absorption layer (2) for photovoltaic conversion. The photoelectric chip can split light and monitor optical power of the incident light.

Abstract: A quantum well structure, a method for processing a chip, and a chip are provided. The quantum well structure includes an indium aluminum arsenide (InAlAs) quantum well layer and an indium aluminum gallium arsenide (InAlGaAs) quantum well layer. The InAlAs quantum well layer is implemented as multiple InAlAs quantum well layers. The thickness of the InAlGaAs quantum well layer is the same as the thickness of the InAlAs quantum well layer. The InAlGaAs quantum well layer is disposed between two adjacent InAlAs quantum well layers. The thickness of the InAlAs quantum well layer ranges from 0.4 nm to 0.6 nm. The number of the multiple InAlAs quantum well layers ranges from 3 to 17.

Abstract: Provided are a photodetector, a manufacturing method thereof, and a lidar system. A photosensitive region of the photodetector is circular and has a diameter range of 100-300 ?m. Compared with a conventional photodetector having a photosensitive region with a diameter of 50 ?m, the photodetector of the present invention can have a detection range greater than 200 m, responsivity greater than 20 A/W and a dark current less than 10 nA.

Abstract: Provided are a photodetector, a manufacturing method thereof, and a lidar system. A photosensitive region of the photodetector is circular and has a diameter range of 100-300 ?m. Compared with a conventional photodetector having a photosensitive region with a diameter of 50 ?m, the photodetector of the present invention can have a detection range greater than 200 m, responsivity greater than 20 A/W and a dark current less than 10 nA.

Abstract: Provided are a photoelectric chip, a manufacturing method and an installation method, which relate to the field of optical communication and transmission technologies. The chip is provided with a light-splitting groove (3), and the light-splitting groove (3) runs through an absorption layer (2) of the chip; the back of the chip is a light-entering side; the light-splitting groove (3) is configured to transmit and split out part (151) of incident light (15), and the other part (152) of the incident light (15) enters the absorption layer (2) for photovoltaic conversion. The photoelectric chip can split light and monitor optical power of the incident light.