Abstract: There is provided a method for manufacturing a diamond cooled device, the method includes (a) obtaining a semiconductor item that includes active elements that emit heat during operation; (b) obtaining via location information regarding vias associated with the active elements; (c) obtaining a diamond layer that comprises openings that are located at positions determined based on the via location information; and (d) bonding the diamond layer to the semiconductor item to provide a bonded item, following the obtaining of the diamond layer.

Abstract: A semiconductor unit that includes a hot areas generating portion that generates hot areas during operation; and hybrid diamond heat spreaders (HDHSs) that are configured to dissipate at least part of the heat generated in the hot areas. A HDHS includes a diamond layer of a first thickness, a first mechanical strength, a first thermal conductivity, and a first coefficient of thermal expansion (CTE) and a diamond layer support element of a second thickness, a second mechanical strength, and a second CTE. According to one or more embodiments at least one of the following is true: (a) the first thickness is lower than the second thickness, (b) the first mechanical strength is higher than the second mechanical strength, (c) the first thermal conductivity exceeds the second thermal conductivity and (d) the second CTE exceeds the first CTE.

Abstract: A method for manufacturing an item that exhibits a heat dissipating property, the method includes (i) forming a first structure that has a smooth silicon surface and includes a first layer of silicon and a diamond layer, wherein the forming includes depositing the first layer of silicon on the diamond layer, (ii) forming a second structure that has a smooth thermal silicon dioxide surface and includes a layer of thermal silicon dioxide and a second layer of silicon, the forming includes growing the layer of thermal silicon dioxide on the second layer of silicon; (iii) forming a third structure, the forming includes fusion bonding the smooth silicon surface to the smooth thermal silicon dioxide surface; (iv) forming a fourth structure, the forming includes removing the second layer of silicon from the third structure; and (v) fusion bonding a substrate to the smooth thermal silicon dioxide surface to provide the item.

Abstract: A method for designing hotspots heat dissipation elements (HHDEs), the method includes (i) obtaining integrated circuit (IC) design information about the integrated circuit; (ii) finding, based on the IC design information, hotspots; (iii) and designing, by a computerized system, the HHDEs, based on the IC design information. At least one HHDE of the HHDEs is made of diamond.