Patents Assigned to Phosistor Technologies, Incorporated
  • Publication number: 20060062521
    Abstract: Composite optical waveguide structures or mode transformers and their methods of fabrication and integration are disclosed, wherein the structures or mode transformers are capable of bidirectional light beam transformation between a small mode size waveguide and a large mode size waveguide. One aspect of the present invention is directed to an optical mode transformer comprising a waveguide core having a high refractive index contrast between the waveguide core and the cladding, the optical mode transformer being configured such that the waveguide core has a taper wherein a thickness of the waveguide core tapers down to a critical thickness value, the critical thickness value being defined as a thickness value below which a significant portion of the energy of a light beam penetrates into the cladding layers surrounding the taper structure thereby enlarging the small mode size.
    Type: Application
    Filed: August 31, 2005
    Publication date: March 23, 2006
    Applicant: Phosistor Technologies, Incorporated
    Inventors: Yan Zhou, Seng-Tiong Ho
  • Patent number: 6878562
    Abstract: A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes an upper barrier layer, a lower barrier layer and a quantum well layer. The quantum well layer is disposed between the upper barrier layer and the lower barrier layer. The quantum well structure is then thermally annealed, thereby inducing quantum well intermixing (QWI) in the quantum well structure and shifting the bandgap energy of the quantum well layer. Also, a photonic device assembly that includes a plurality of operably coupled photonic devices monolithically integrated on a single substrate using the process described above.
    Type: Grant
    Filed: July 26, 2001
    Date of Patent: April 12, 2005
    Assignee: Phosistor Technologies, Incorporated
    Inventors: Boon-Siew Ooi, Seng-Tiong Ho