Abstract: A semiconductor light-emitting device includes at least one light-emitting chip. The light-emitting chip includes plural light-emitting units, which are electrically coupled to each other in series, in parallel or in series-parallel combination; a first-type electrode electrically coupled to an external power source, the first-type electrode being disposed on one of the light-emitting units; a second-type electrode disposed on another of the light-emitting units; and a tapped point for electrically coupling at least one of the light-emitting units to an electronic component.

Abstract: The present invention is directed to a light-emitting diode (LED) device, which includes at least one LED unit. Each LED unit includes at least one LED, which includes a first doped layer, a second doped layer and a conductive defect layer. The conductive defect layer is formed on the first or second doped layer. The conductive defect layer may be deposited between two LEDs, or between the first/second doped layer and an electrode.

Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Abstract: A method of manufacturing a semiconductor apparatus is disclosed. A first-type doped layer, a second-type doped layer, and an internal electrical connection layer are formed. The internal electrical connection layer is deposited and electrically coupled between the first-type doped layer and the second-type doped layer. In one embodiment, the internal electrical connection layer is formed by using a group IV based precursor and nitrogen based precursor. In another embodiment, the internal electrical connection layer is formed by a mixture comprising a carbon-contained doping source, and the internal electrical connection layer has a carbon concentration greater than 1017 atoms/cm3. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the first-type doped layer and the second-type doped layer.

Abstract: A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 1017 atoms/cm3. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the p-type doped layer and the n-type doped layer.

Abstract: A semiconductor light-emitting device includes a circuit board with a layout layer and a die bonding area. At least one positive endpoint, negative endpoint and function endpoint are disposed on the layout layer. At least one semiconductor light-emitting chip is disposed within the die bonding area, and is electrically coupled to the positive endpoint, the negative endpoint and the function endpoint to facilitate various connection configurations.

Abstract: A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.

Abstract: A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes opposite the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes with the interconnect.

Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Abstract: A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction.

Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Abstract: A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer. An electrode pattern is located on an upper surface of the second epitaxial structure, wherein the posts are located under electrodes in the electrode pattern.

Abstract: A semiconductor light-emitting device includes at least one light-emitting chip. The light-emitting chip includes plural light-emitting units, which are electrically coupled to each other in series, in parallel or in series-parallel combination; a first-type electrode electrically coupled to an external power source, the first-type electrode being disposed on one of the light-emitting units; a second-type electrode disposed on another of the light-emitting units; and a tapped point for electrically coupling at least one of the light-emitting units to an electronic component.

Abstract: An illuminating device includes at least one light-emitting source. The light-emitting source includes a substrate; at least one light-emitting chip disposed on the substrate; and at least one constant-current component electrically coupled to the light-emitting chip. The light-emitting chip includes multiple light-emitting units that are electrically coupled in series, in parallel, or in series-parallel; a first-type electrode, disposed on at least one of the light-emitting units, for electrically coupling to a central DC power source; a second-type electrode disposed on at least one light-emitting unit different from the one, on which the first-type electrode is disposed; and a tapped point configured for electrically coupling at least one of the light-emitting units to the constant-current component.

Abstract: A semiconductor light-emitting device includes a circuit board with a layout layer and a die bonding area. At least one positive endpoint, negative endpoint and function endpoint are disposed on the layout layer. At least one semiconductor light-emitting chip is disposed within the die bonding area, and is electrically coupled to the positive endpoint, the negative endpoint and the function endpoint to facilitate various connection configurations.

Abstract: A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction.

Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Abstract: A light-emitting diode (LED) device includes at least one LED unit, each including a substrate; an electrical coupling layer deposited above the substrate; a parallel-connected epitaxial structure deposited above the electrical coupling layer; and an intermediate layer deposited between the electrical coupling layer and the parallel-connected epitaxial structure. In another embodiment, the parallel-connected epitaxial structure is deposited above a conductive layer; the electrical coupling layer is deposited above the parallel-connected epitaxial structure; and the intermediate layer is deposited between the parallel-connected epitaxial structure and the electrical coupling layer.

Abstract: A semiconductor light emitting component including an epitaxial structure, a first electrode, a second electrode, a first cutout structure and a second cutout structure is provided. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. The first electrode is formed on a surface of the first type doped layer. The second electrode is formed on a surface of the second type doped layer. The first cutout structure is formed in the first type doped layer to expose at least a portion of the first electrode. The second cutout structure is formed in the first type doped layer, the light emitting portion and the second type doped layer so as to expose at least a portion of the second electrode.

Abstract: A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices.