Abstract: A LIDAR instrument and a method for operating a LIDAR instrument are disclosed. In an embodiment a LIDAR instrument includes a transmitter including a narrow band laser diode configured to emit light in a spectral envelope of 2 nm or less around a central wavelength, wherein the spectral envelope overlaps with an atmospheric molecular absorption band in which a solar radiation is attenuated by at least 3 dB compared to an adjacent non-spectrally-attenuated wavelength band, wherein molecular absorption in the atmospheric molecular absorption band is due to water vapor, carbon dioxide, oxygen, ozone methane, or nitrous oxide and wherein the atmospheric molecular absorption band is located between 700 nm and 10,000 nm, and a detector including a filter configured to receive a reflected light in a band of 5 nm or less around the central wavelength.

Abstract: Laser with extended mode-hop free spectral tuning ranges and methods for manufacturing such lasers are disclosed. In an embodiment the method includes providing a light emitting device, the light emitting device comprising a gain region and a first wavelength selection region and mounting the light emitting device on a thermally conductive carrier such that the gain region is mounted on a first carrier surface and the first wavelength selection region is arranged over and spaced apart from a second carrier surface.

Abstract: Laser with extended mode-hop free spectral tuning ranges and methods of manufacture such lasers are disclosed. In one embodiment an electrical device includes a carrier and a light emitting device including an active region and a first passive region disposed on a first side of the active region, wherein the active region of the light emitting device is disposed on the carrier while the first passive region is thermally floating.

Abstract: Laser with extended mode-hop free spectral tuning ranges and methods of manufacture such lasers are disclosed. In one embodiment an electrical device includes a carrier and a light emitting device including an active region and a first passive region disposed on a first side of the active region, wherein the active region of the light emitting device is disposed on the carrier while the first passive region is thermally floating.

Abstract: An optical system includes an electrically pumped laser light source and an optically pumped laser light source. An optical switch is located in a light path of the electrically pumped laser light source such that when the optical switch is in a first position light from the electrically pumped laser light source is directed toward the optically pumped laser light source and when the optical switch is in a second position light from the electrically pumped laser light source is directed away from the optically pumped laser light source.

Abstract: An optical system includes an electrically pumped laser light source and an optically pumped laser light source. An optical switch is located in a light path of the electrically pumped laser light source such that when the optical switch is in a first position light from the electrically pumped laser light source is directed toward the optically pumped laser light source and when the optical switch is in a second position light from the electrically pumped laser light source is directed away from the optically pumped laser light source.

Abstract: A display system includes an optical light source and a display panel with an array of optically excitable pixels. Optics are positioned between the optical light source and the display panel so as to direct light from the optical light source toward the display panel to cause the optically excitable pixels to emit a visible image.

Abstract: An optical system includes an electrically pumped laser light source and an optically pumped laser light source. An optical switch is located in a light path of the electrically pumped laser light source such that when the optical switch is in a first position light from the electrically pumped laser light source is directed toward the optically pumped laser light source and when the optical switch is in a second position light from the electrically pumped laser light source is directed away from the optically pumped laser light source.

Abstract: A display system includes an optical light source and a display panel with an array of optically excitable pixels. Optics are positioned between the optical light source and the display panel so as to direct light from the optical light source toward the display panel to cause the optically excitable pixels to emit a visible image.

Abstract: An optical system includes an electrically pumped laser light source and an optically pumped laser light source. An optical switch is located in a light path of the electrically pumped laser light source such that when the optical switch is in a first position light from the electrically pumped laser light source is directed toward the optically pumped laser light source and when the optical switch is in a second position light from the electrically pumped laser light source is directed away from the optically pumped laser light source.

Abstract: A system, a structure, and a method for the generation of second harmonic light are provided. A laser system comprises a seed laser that produces a fundamental frequency light, and a nonresonant multiple pass nonlinear structure generates a second harmonic light using the fundamental frequency light. A second harmonic outcoupler outputs the second harmonic light from the laser system and a reflecting structure reflects a remaining portion of the fundamental frequency light back into the nonresonant multiple pass nonlinear structure to generate additional second harmonic light.

Abstract: Laser diodes are formed with an outcoupling grating between two separate distributed Bragg reflectors. The devices have gain regions located between the reflector gratings for pumping the active region. The outcoupling grating couples light out of the waveguide normal to the surface if the grating spacings are equal to an integer number of wavelengths of the light within the cavity. If the gratings are not such an integer number, the light is coupled out of the cavity off the normal.

Abstract: A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.

Abstract: An improved grating-outcoupled surface-emitting semiconductor laser architecture is provided. A second-order grating is placed between two distributed Bragg reflector gratings. The period of the second order grating is positively or negatively detuned from the distributed Bragg reflector selected optical wavelength at which the laser operates. Detuning of the second-order grating towards shorter or longer wavelengths allows kink-free, linear LI curves light output versus forward current) for grating-outcoupled surface-emitting lasers. Due to the detuning of the outcoupler grating, the outcoupled radiation emits two beams that deviate slightly from the normal axis. A design point may then be chosen where the power outcoupled by symmetric and antisymmetric modes cross and where the outcoupled power is independent of the phase variation.

Abstract: A surface emitting semiconductor laser system having four cavities that couple light from a single aperture. Each of the four cavities overlaps at the outcoupling aperture. Each cavity is fabricated to resonate at a different central wavelength, outputting a different frequency of light, each of which can be independently modulated.

Abstract: A surface emitting semiconductor laser system having an outcoupling aperture on a central waveguide. At either end of the central waveguide are means for reflecting a plurality of different wavelengths of light such that multiple wavelengths are outcoupled through a single outcoupling aperture. Means are provided by which the different wavelengths can be independently modulated.

Abstract: A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.

Abstract: An improved grating-outcoupled surface-emitting semiconductor laser architecture is provided. A second-order grating is placed between two distributed Bragg reflector gratings. The period of the second order grating is positively or negatively detuned from the distributed Bragg reflector selected optical wavelength at which the laser operates. Detuning of the second-order grating towards shorter or longer wavelengths allows kink-free, linear LI curves light output versus forward current) for grating-outcoupled surface-emitting lasers. Due to the detuning of the outcoupler grating, the outcoupled radiation emits two beams that deviate slightly from the normal axis. A design point may then be chosen where the power coutcoupled by symmetric and antisymmetric modes cross and where the outcoupled power is independent of the phase variation.

Abstract: An exemplary optical isolator, such as a magnetic-semiconductor composite optical isolator, and method for making the same, is provided that includes a semiconductor waveguide and a magnetic-semiconductor composite layer. The semiconductor waveguide includes a guide layer, a first clad layer and a second clad layer. The guide layer includes one or more layers with a first end, a second end, a top, and a bottom, the guide layer allows a light wave incident the first end of the guide layer to propagate in a positive propagation direction, and allows a light wave incident the second end of the guide layer to propagate in a negative propagation direction. The first clad layer and the second clad layer are provided, respectively, relative to the bottom and the top of the guide layer, and the second clad layer has a thickness to allow an optical field penetration through the second clad layer.

Abstract: A planar wafer-level packaging method is provided for a laser and a microlens. Light from the laser is directed and shaped by the microlens to couple into an external light guide. A plurality of such assemblies, each comprising a laser and a microlens may be assembled on a single planar substrate. A tapered surface is formed on the microlens. The microlens may be formed from a silicon substrate. The angle of the tapered surface causes an accurate cone or pyramid shape. The tapered surface is formed such that the axis of the cone or pyramid is aligned with the optical axis of the lens. The lens may then be aligned with the optical axis of the laser. A light guide receptacle is formed with a tapered surface that matches the tapered surface of the microlens. The tapered surface of the receptacle is formed such that the axis of the cone or pyramid is aligned with the optical axis of the receptacle. The receptacle may then be passively aligned with the microlens by mating the tapered surfaces.