Patents Assigned to Photon Wave Co., Ltd.
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Publication number: 20230282769Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region dispType: ApplicationFiled: May 11, 2023Publication date: September 7, 2023Applicant: Photon Wave Co., Ltd.Inventors: Youn Joon SUNG, Seung Kyu OH, Jae Bong SO, Gil Jun LEE, Won Ho KIM, Tae Wan KWON, Eric OH, Il Gyun CHOI, Jin Young JUNG
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Publication number: 20230238419Abstract: An embodiment discloses an ultraviolet light-emitting device including: a light-emitting structure including a plurality of light-emitting portions disposed on a first conductive type semiconductor layer, the plurality of light-emitting portions including an active layer and a second conductive type semiconductor layer; a first contact electrode disposed on the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; a first cover electrode disposed on the first contact electrode; and a second cover electrode disposed on the second contact electrode, wherein the light-emitting structure includes an intermediate layer formed in an etched region through which the first conductive type semiconductor layer is exposed, the intermediate layer including a lower composition of aluminum than the first conductive type semiconductor layer, wherein the intermediate layer includes a first intermediate region disposed between the plurality of light-emType: ApplicationFiled: September 24, 2021Publication date: July 27, 2023Applicant: Photon Wave Co., Ltd.Inventors: Youn Joon SUNG, Hae Jin PARK, Seung Kyu OH, Jae Bong SO, Gil Jun LEE, Il Gyun CHOI
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Patent number: 11682747Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region dispType: GrantFiled: February 18, 2021Date of Patent: June 20, 2023Assignee: Photon Wave Co.. Ltd.Inventors: Youn Joon Sung, Seung Kyu Oh, Jae Bong So, Gil Jun Lee, Won Ho Kim, Tae Wan Kwon, Eric Oh, Il Gyun Choi, Jin Young Jung
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Publication number: 20220077348Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region dispType: ApplicationFiled: February 18, 2021Publication date: March 10, 2022Applicant: Photon Wave Co., Ltd.Inventors: Youn Joon SUNG, Seung Kyu OH, Jae Bong SO, Gil Jun LEE, Won Ho KIM, Tae Wan KWON, Eric OH, Il Gyun CHOI, Jin Young JUNG