Abstract: The present invention discloses an optoelectronic detector for light sensing. The optoelectronic detector has a photosensitive element that converts light into electrons. Efficient collection of these electrons at readout nodes, embedded in the photosensitive element, is required to make correct measurements of light characteristics such as, phase shift and intensity. This collection of electrons is achieved by applying a voltage gradient across an electrode within the optoelectronic detector. The optoelectronic detector can have multiple readout nodes. Further, the present invention discloses methods for detecting intensity and phase shift of impinging light and for suppression of background illumination while detecting the characteristics of light.

Abstract: A photodetector and a method for detecting radiation are disclosed. The photodetector comprises a zone of a semiconductor material suitably doped to collect photogenerated charges, coupled in parallel to a capacitance between a ground voltage and a sensing node. A metal oxide semiconductor (MOS) transistor is coupled at its source and a drain between the sensing node and a supply voltage, and a means for applying a predetermined voltage to the gate of the transistor Ls provided. In operation, the capacitance is first charged so that the magnitude of a voltage at the sensing node is greater than a transition voltage magnitude, and a predetermined gate voltage is applied. The transistor then is non-conductive, and a photocurrent of a magnitude dependent on the intensity of incident radiation flows through the zone of semiconductor material, discharging the capacitance and causing the sensing node voltage to vary substantially linearly with the photocurrent magnitude.