Abstract: A package and method for packaging optoelectronic or electronic components is provided in which multiple chip regions are packaged simultaneously prior to sectioning of the wafer into chips. The method and package allows micro-optic and other package elements to be integrated onto wafers on the same face as the optoelectronic or electronic devices without inhibiting the ability to make electrical contact to the devices. The package elements may be integrated to the wafer by material deposition, by spinning, or by physical mounting.

Abstract: A phased array of semiconductor laser elements is provided in which the percentage of light which propagates into different diffractive orders is modified by an optical element. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation form a surface of the body, and separate reflecting mirrors at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The optical element may take the form of a modification in the arrangement of the semiconductor laser elements, or an array of microprisms, or an external mirror to modify the percentage of light which propagates into different diffractive orders.

Abstract: An optical interconnect is disclosed that couples multiple optical fibers to an array of optoelectronic devices. The interconnect includes a multiple optical fiber connector and an optoelectronic board. The multiple fiber connector can be mechanically attached to or detached from the board.

Abstract: This invention discloses vertical cavity surface emitting lasers (VCSELs) formed to emit optical radiation that has a controlled direction of polarization. In one embodiment, a VCSEL has an active region that contains at least one strained semiconductor layer which has a preferred direction of electrical conductivity due to the strain. As a result, the optical radiation emitted from the VCSEL has a direction of polarization that is parallel to the preferred direction of conductivity. In another embodiment, a VCSEL has an elongated active region, and the direction of polarization of the radiation emitted from the VCSEL is parallel to a longitudinal axis of the active region. The invention also discloses a VCSEL array comprising vertical cavity surface emitting lasers having elongated active regions. By forming the elongated active regions parallel to each other, the array emits optical radiation having parallel polarization.

Abstract: Method and apparatus for generating and delivering a gas that contains vapor produced by subliming a solid for use in chemical vapor deposition processes such as Metal Organic Molecular Beam Epitaxy (MOMBE) and Organometallic Vapor Phase Epitaxy (OMVPE). The method includes generating a gas saturated with the vapor and subsequently diluting the gas with an inert gas to obtain an uniform non-saturated gas. The apparatus includes a vessel for containing a sublimable solid, a heater for maintaining the vessel at a desired temperature, tubes and valves for introducing a gas into the vessel and for discharging a gas that is saturated with the vapor of the solid from the vessel, and a tube and a valve for diluting a gas discharged from the vessel.

Abstract: A vertical-cavity, surface-emitting semiconductor diode laser having a monolithic and planar surface and having lateral anisotropy in order to control the polarization of the emitted beam of light. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation from a surface of the body, and a separate reflecting mirror at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The anisotropy may be provided by utilizing anisotropy in the atomic or molecular structure of the materials forming the laser, or by anisotropic patterning or deliberate offset alignment in processing of the laser or through anisotropic structures in the laser cavity to control the polarization of the emitted beam.

Abstract: The present invention is directed to an optical system which includes an image region having at least one light source which directs a beam of light along an optical axis and an object region which is adapted to receive the light from the light source. An optical delivery system is between the image region and object region. The optical delivery system receives the light from the image region and directs it to the object region. The optical delivery system is formed of a plurality of optical elements, such as lenses and volume holograms. The optical delivery system is designed to either receive a plurality of beams of light from a plurality of sources or different modes of a single light source and form a single spot of light in the image region having the combined power of all of the beams of light or modes of a single beam. The optical delivery system can also condense or expand the spacing between the beams of light from a plurality of light sources.

Abstract: A vertical-cavity, surface-emitting semiconductor laser having a substrate, an active layer of a semiconductor material which is adapted to generate light on a surface of the substrate, a pair of mirrors at opposite sides of the active layer and means for expanding the diameter of the output beam. Such means include a spacer layer of an optically passive material between the active layer and at least one of the mirrors, and mirror layers of reduced difference in index of refraction, interface layers having intermediate indices of refraction placed between mirror layers, in either case expanding the effective optical cavity length to at least 100 times the thickness of the active material in the active layer. Another means is anti-waveguiding which directly expands the diameter of the beam. The expanded cavity provides an output beam of larger diameter while maintaining stable single mode emission. The spacer layer may be a separate layer or region over the substrate or at least a portion of the substrate.