Abstract: An electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure having an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows. Also disclosed is a vacuum tube using electron multiplying with an electron multiplying structure.
Type:
Grant
Filed:
May 27, 2011
Date of Patent:
November 10, 2015
Assignee:
PHOTONIS FRANCE SAS
Inventors:
Gert Nützel, Pascal Lavoute, Richard Jackman
Abstract: An electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure having an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows. Also disclosed is a vacuum tube using electron multiplying with an electron multiplying structure.
Type:
Application
Filed:
May 27, 2011
Publication date:
May 30, 2013
Applicant:
PHOTONIS FRANCE SAS
Inventors:
Gert Nützel, Pascal Lavoute, Richard Jackman