Abstract: An image intensifier is provided in which a thin film (090) is arranged between an output surface of the electron multiplier (040) and the phosphorous screen. The thin film is a semi-conductor or insulator with a crystalline structure comprising a band gap equal or larger than 1 eV, wherein the crystalline structure has a carrier diffusion length equal or larger than 50% of the thickness of the thin film. In addition, the thin film has an anode directed surface which has a negative electron affinity. By way of provisioning a thin film of the above type in the image intensifier, an improvement in mean transfer function of the overall image intensifier is obtained.
Abstract: An image intensifier sensor for acquiring, amplifying and displaying images and including a vacuum envelope, the image intensifier sensor including a photocathode arranged for releasing photoelectrons into the vacuum envelope upon electromagnetic radiation acquired from the images which impinges the photocathode, an anode, spaced apart from and in facing relationship with the photocathode, arranged for receiving the photoelectrons and converting the photoelectrons for displaying the images on the basis thereof, and a power supply unit for providing power to the image intensifier sensor, wherein the image intensifier sensor further includes potting material, wherein the potting material comprises a foam compound.
Abstract: An imaging device (100) for acquiring and displaying images in real-time, the imaging device comprising i) an imaging sensor (110) comprising a radiation sensitive array (120) for acquiring an image (142), ii) a readout circuit (140) connected to the radiation sensitive array for reading out the image, iii) a signal processor (160) for processing the image for obtaining a processed image (162), and iv) a display (180) for displaying the processed image, the radiation sensitive array being arranged in rows of sensor pixels and the display being arranged in rows of display pixels, and wherein the readout circuit is a rolling shutter circuit for sequentially reading out the rows of sensor pixels for sequentially providing subsets of pixels, the signal processor is configured for, on availability of one of the subsets of pixels, processing the subset of pixels for providing a processed subset of pixels, and the display is configured for, on availability of the processed subset of pixels, displaying the processed
Abstract: An imaging device (100) for acquiring and displaying images in real-time, the imaging device comprising i) an imaging sensor (110) comprising a radiation sensitive array (120) for acquiring an image (142), ii) a readout circuit (140) connected to the radiation sensitive array for reading out the image, iii) a signal processor (160) for processing the image for obtaining a processed image (162), and iv) a display (180) for displaying the processed image, the radiation sensitive array being arranged in rows of sensor pixels and the display being arranged in rows of display pixels, and wherein the readout circuit is a rolling shutter circuit for sequentially reading out the rows of sensor pixels for sequentially providing subsets of pixels, the signal processor is configured for, on availability of one of the subsets of pixels, processing the subset of pixels for providing a processed subset of pixels, and the display is configured for, on availability of the processed subset of pixels, displaying the processed
Abstract: An electron multiplying structure for use in a vacuum tube using electron multiplying comprises an input face to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face to be oriented in a facing relationship with a detection surface of the vacuum tube, as well as an ion barrier membrane for shielding off stray ions. The vacuum tube uses electron multiplying having a photocathode capable of releasing electrons into the vacuum chamber when exposed to light, electric field device for accelerating the released electrons from the photocathode towards an anode spaced apart from the photocathode in a facing relationship, as well as an electron multiplying structure. An ion barrier membrane is used in a vacuum tube and/or an electron multiplying structure. The ion barrier membrane is composed of at least one atomic layer containing graphene.
Abstract: The invention relates to an image sensor array having multiple pixel sensor elements along the surface area of said image sensor and outputting at a specified video frame rate subsequent video frames corresponding to the image, characterized in that each multiple pixel sensor element is arranged for generating one or more video frame segments, said segments each having a time duration being a fraction of the time equivalent to the video frame rate, and composing a single video frame from the multiple of said video frame segments. The invention also relates to said pixel sensor element for use with an image intensifier or in an electron bombarded image sensor array device according to the invention.