Abstract: An optical receiver that can tune a selected wavelength using a wavelength tunable filter transmitting a plurality of wavelengths. The optical receiver is a wavelength tunable optical receiver that includes: a wavelength tunable filter (100) transmitting laser light from an optical fiber; and a photodiode (300) receiving laser light passing through the wavelength tunable filter (100), in which the wavelength tunable filter 100 is a Fabry-Perot type etalon filter transmitting a plurality of wavelengths. When a channel with a specific wavelength is moved to a channel with another wavelength, an optical channel is selected based on a peak different from a transmissive peak of an FP etalon filter selecting the previous channel so that temperature of the wavelength tunable filter can be changed. A light-receiving photodiode chip is disposed on a thermoelectric element and a wavelength tunable filter transmits different wavelengths in accordance with temperature of the thermoelectric element.

Abstract: The present invention relates to A channel set up method of optical receiver with wavelength tunable filter such as an etalon filter in a TO type received wavelength-tunable optical receiver. According to the method of setting a channel in a wavelength-tunable optical receiver of the present invention, by circularly receiving communication channels within a predetermined temperature range, in which selectively receiving communication channel using two adjacent transmissive modes in the transmissive modes of a wavelength-tunable filter, it is possible to individually select and receive all communication channels with a predetermined temperature range. Further, it is possible to use all FP type etalon filters regardless of transmissive wavelength characteristics in at a specific temperature of a wavelength-tunable filter, so it is possible to reduce a manufacturing cost and power consumption of a product and increase thermal stability of a package.

Abstract: A semiconductor laser device which comprises a laser diode chip (100) that emits laser light; a 45° reflective mirror (400) that changes laser light traveling horizontally to a package bottom into laser light traveling perpendicular to the package bottom. The 45° reflective mirror (400) is a partial reflective mirror which has a partial reflection/partial transmission characteristic. An optical feedback-partial reflective mirror (500) is disposed along a path of light passing vertically through the 45° reflective mirror (400). The optical feedback-partial reflective mirror (500) supplies some of the laser light traveling through the 45° reflective mirror (400) back to the 45° reflective mirror 400 by reflecting a first portion of the laser light while transmitting a remaining portion of the laser light.

Abstract: Disclosed herein is a technology of effectively interrupting light reflected from a wavelength selective filter so as not to be fed back to a laser diode chip in a semiconductor laser package having a function of adjusting a relative intensity ratio of a signal of “1” and a signal of “0” using an optical filter. Since an optical interruption device according to the present invention may effectively interrupt a light feedback to the laser diode chip by adjusting characteristics of a 45 degree partial reflection mirror in an existing TO-can type laser device having the 45 degree partial reflection mirror and additionally disposing one ?/4 waveplate, unlike an optical isolator according to the related art using an existing Faraday rotator, the signals of “1” and “0” may be effectively adjusted in a TO-can type laser device having a small volume, thereby improving a function of communication.

Abstract: The present invention relates to an external cavity type laser provided with a wavemeter capable of precisely measuring a wavelength of a laser beam based on a transmission wavelength band of a wavelength selective filter inserted into a cavity regardless of a driving current of a laser diode chip.

Abstract: The present invention relates to a wavelength-tunable laser, which can tune an oscillating laser wavelength and can be manufactured in a small size, comprising: a laser diode chip (100) for emitting a laser beam; a partial reflection mirror (500) for optical feedback, which partially reflects the beam emitted from the laser diode chip (100) so as to enable the reflected beam to be fed back to the laser diode chip (100); a collimation lens (200) provided on an optical path between the laser diode chip (100) and the partial reflection mirror (500) for optical feedback so as to collimate the beam emitted from the laser diode chip (100); a wavelength-tunable selective filter (300) for converting the wavelength transmitted according to the temperature; a phase compensator (350) of which a refractive index is changed according to the temperature and which offsets a change in the refractive index according to the temperature of the semiconductor laser diode chip (100) or the wavelength-tunable selective filter (300)

Abstract: A light receiving module having a built-in wavelength-tunable wavelength-selective filter that can selectively receive light with a specific wavelength from laser light with various wavelengths emitted from an optical fiber and tune the specific wavelength. In the light receiving module including a light receiving element having a built-in wavelength-tunable wavelength-selective filter that receives laser light from an optical fiber according to the present invention, a flat plate-shaped window (240) transmitting laser light from an optical fiber (600) is formed in the light receiving element (22), a wavelength-tunable wavelength-selective filter for separating wavelengths of laser light traveling as parallel light is disposed in the light receiving element (22), and a lens (400) converting laser light from the optical fiber (600) into parallel light is disposed between the optical fiber (600) and the light receiving element (22).

Abstract: A TO type laser device that can perform long-distance transmission due to a reduced line breadth of laser light. A semiconductor laser device which comprises a laser diode chip (100) that emits laser light; a wavelength-selective filter; a collimating lens (200) disposed in a light path between the laser diode chip (100) and the wavelength-selective filter and to collimate light emitted from the laser diode chip (100); a 45°-partial reflective mirror (300) disposed in a light path between the laser diode chip (100) and the wavelength-selective filter for changing laser light traveling parallel to the bottom of a package into laser light traveling perpendicularly to the bottom of the package; and an optical wavelength supervisory photodiode (500) disposed in a light path along which laser light reflecting from the wavelength-selective filter, after being emitted from the laser diode chip (100), passes through the 45°-partial reflective mirror (300).

Abstract: The present invention relates to a compact tunable laser device that can change the oscillation laser wavelength.

Abstract: The present invention relates to a wavelength-tunable laser apparatus which can measure a wavelength in a wavelength-tunable laser diode package structure for dense wavelength division multiplexing (DWDM) having a transistor outline (TO) type appearance.

Abstract: A TO type laser device that can perform long-distance transmission due to a reduced line breadth of laser light. A semiconductor laser device which comprises a laser diode chip (100) that emits laser light; a wavelength-selective filter; a collimating lens (200) disposed in a light path between the laser diode chip (100) and the wavelength-selective filter and to collimate light emitted from the laser diode chip (100); a 45°-partial reflective mirror (300) disposed in a light path between the laser diode chip (100) and the wavelength-selective filter for changing laser light traveling parallel to the bottom of a package into laser light traveling perpendicularly to the bottom of the package; and an optical wavelength supervisory photodiode (500) disposed in a light path along which laser light reflecting from the wavelength-selective filter, after being emitted from the laser diode chip (100), passes through the 45°-partial reflective mirror (300).

Abstract: Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires.

Abstract: The present invention relates to a wavelength-tunable laser apparatus which can measure a wavelength in a wavelength-tunable laser diode package structure for dense wavelength division multiplexing (DWDM) having a transistor outline (TO) type appearance.

Abstract: Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires.

Abstract: The present invention relates w a wavelength-convertible semiconductor laser which is driven by a pulse, and more specifically, to a wavelength-convertible semiconductor laser, wherein: an expanded resonator is formed by including a laser diode chip on the outside of a pump semiconductor laser diode chip; and an oscillating wavelength of a pump laser is driven by a pulse determined from the outside of the semiconductor laser diode chip by inserting a filter, which is capable of selecting a wavelength, on the inside of said expanded resonator.