Abstract: A device for converting solar radiation is described wherein the device comprises an inorganic luminescent material comprising a host material doped with Mn5+ ions for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of the near-infrared radiation part of the electromagnetic spectrum, preferably the infrared part between 1150 nm and 1250 nm, preferably around 1190 nm (the infrared emission peak of Mn5+); or, an amorphous host material doped with Sm2+ or Tm2+ ions, the amorphous host material including the elements Al, Si, O and N (SiAlON) for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of a longer wavelength, preferably a longer wavelength between 650 nm and 800 nm or a longer wavelength of around 1140 nm; and, at least one photovoltaic device for converting at least part of the converted radiation into electrical power.

Abstract: A luminescent layer is described comprising an Eu2+ doped inorganic luminescent material comprising or consisting essentially of the elements Al and/or Si and the elements O and/or N, the doped inorganic luminescent material converting radiation of the UV region between 200 nm and 400 nm of the solar spectrum into the photosynthetically active radiation (PAR) region (400 nm-700 nm) of the solar spectrum, wherein the Si concentration in the inorganic luminescent material is selected between 0 and 45 at. %, the Al concentration between 0 and 50 at. %, the O concentration between 0 and 70 at. %, the N concentration between 0 and 60 at. % and the Eu2+ between 0.01 and 30 at. %.

Abstract: A device for converting solar radiation is described wherein the device comprises an inorganic luminescent material comprising a host material doped with Mn5+ ions for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of the near-infrared radiation part of the electromagnetic spectrum, preferably the infrared part between 1150 nm and 1250 nm, preferably around 1190 nm (the infrared emission peak of Mn5+); or, an amorphous host material doped with Sm2+ or Tm2+ ions, the amorphous host material including the elements Al, Si, O and N (SiAlON) for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of a longer wavelength, preferably a longer wavelength between 650 nm and 800 nm or a longer wavelength of around 1140 nm; and, at least one photovoltaic device for converting at least part of the converted radiation into electrical power.

Abstract: A solar radiation conversion device is described that uses a luminescent Tm2+ inorganic material for converting solar radiation of at least part of the UV and/or visible and/or infrared solar spectrum into infrared solar radiation, preferably the infrared solar radiation having a wavelength of around 1138 nm; and, a photovoltaic device for converting at least part of the infrared solar radiation into electrical power.

Abstract: A luminescent layer is described comprising an Eu2+ doped inorganic luminescent material comprising or consisting essentially of the elements Al and/or Si and the elements O and/or N, the doped inorganic luminescent material converting radiation of the UV region between 200 nm and 400 nm of the solar spectrum into the photosynthetically active radiation (PAR) region (400 nm-700 nm) of the solar spectrum, wherein the Si concentration in the inorganic luminescent material is selected between 0 and 45 at. %, the Al concentration between 0 and 50 at. %, the O concentration between 0 and 70 at. %, the N concentration between 0 and 60 at. % and the Eu2+ between 0.01 and 30 at. %.

Abstract: Luminescent greenhouse glazing structures are described wherein the glazing structures comprise: a glass pane for a greenhouse; and, one or more Eu2+ doped amorphous inorganic luminescent thin film layers provided over the glass pane, wherein the one or more Eu2+ doped amorphous inorganic luminescent layers comprise or consist essentially of the elements Al and/or Si and the elements O and/or N; and, wherein the Si concentration is selected between 0 and 45 at. %, the Al concentration between 0 and 50 at. %, the O concentration between 0 and 70 at. %, the N concentration between 0 and 60 at. % and the Eu2+ between 0.01 and 30 at. %.

Abstract: A device for converting solar radiation is described wherein the device comprises an inorganic luminescent material comprising a host material doped with Mn5+ ions for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of the near-infrared radiation part of the electromagnetic spectrum, preferably the infrared part between 1150 nm and 1250 nm, preferably around 1190 nm (the infrared emission peak of Mn5+); or, an amorphous host material doped with Sm2+ or Tm2+ ions, the amorphous host material including the elements Al, Si, O and N (SiAION) for converting radiation of the UV and/or visible part of the electromagnetic spectrum into radiation of a longer wavelength, preferably a longer wavelength between 650 n and 800 nm or a longer wavelength of around 1140 n; and, at least one photovoltaic device for converting at least part of the converted radiation into electrical power.

Abstract: Glazing assembly are described comprising at least a first (inner) glass pane, a second (outer) glass pane and at least one peripheral spacer structure for providing a predetermined separation between the first and second glass pane, the peripheral spacer structure being positioned at the peripheral area of the first and second glass pane; one or more photovoltaic (PV) cell modules mounted on at least part of the peripheral spacer structure, the one or more PV cell modules being positioned in the space defined by the first and second glass panes and the peripheral spacer structure (inter-pane space); wherein at least part of the peripheral spacer structure comprises one or more mounting members adapted to orient a light receiving surface of PV cells of the PV cell modules in a tilted position with respect to the plane of the second (outer) glass pane.