Abstract: Silanol-containing organic-inorganic hybrid coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with metal and silanol containing polyhydridosilsesquioxane resin solutions. Provided herein is also a method for patterning a metal and silanol containing polyhydridosilsesquioxane coated substrate with radiation of light at a specific wavelength, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate. The invention allows for obtaining a preselected silanol content polyhydridosilsesquioxane resin, and adjustment of the silanol content will make it possible to obtain a highly sensitive coating for application in EUV.

Abstract: Carbon-carbon unsaturated bond containing, halogen containing, and solubility-enhancer containing coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with carbon-carbon unsaturated bond-containing, halogen-containing, and solubility-enhancer containing polyhydrogensilsesquioxane resin solutions. Provided herein is also a method for patterning substrate coating of a polyhydrogensilsesquioxane containing a carbon-carbon unsaturated bond, halogen, and solubility-enhancer with radiation of light, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate.

Abstract: According to an aspect, there is provided a method comprising controlling a structural light source of a modelling arrangement to produce a diffraction pattern of a known geometry on a surface to be modeled, the diffraction pattern accurately complying with a mathematical-physical model and wherein beam output angles of the diffraction pattern are accurately known based on the mathematical-physical model; recording a first image of the surface comprising the diffraction pattern with a first camera and a second image of the surface comprising the diffraction pattern with a second camera substantially simultaneously; determining a point cloud comprising primary points from the diffraction pattern visible in the first image; identifying the corresponding primary points from the second image; and using each primary point of the point cloud in the first and second images as an initial point for search spaces for secondary points in the first and second images.

Abstract: Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Abstract: Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminum oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.