Abstract: The present invention is a method for localized chemical vapor deposition (CVD) for localized growing for example for carbon nanotubes (CNT), nanowires, and oxidation using a heated tip or an array of heated tips to locally heat the area of interest. As the tips moved, material such as CNTs grows in the direction of movement. The Scanning Probe Growth (SPG) or nanoCVD technique has similarities to the CVD growth; however it allows for controlled synthesis and direction and eliminates the need for masks.

Abstract: This invention addresses a contact mode hybrid scanning system (HSS), which can be used for measuring topography. The system consists of a cantilever or a cantilever array, a scanning stage, a light source, and instrumentation to synchronize and control the individual components. Detection of the cantilever's movement is achieved by directly measuring the change in disposition of the cantilever including its height, rotation at one or more points on the cantilever thereby providing a partial three-dimensional reconstruction without the need for actuating the cantilever. This is achieved by employing a displacement meter such as a triangulation meter or a confocal meter.

Abstract: Systems and methods are described for identifying characteristics and defects in material such as semiconductors. Methods include scanning a thermal probe in the vicinity of a semiconductor sample, applying stimuli to the thermal probe, and monitoring the interaction of the thermal probe and the semiconductor. The stimulus can be applied by a variety of methods, including Joule heating of a resistor in the proximity of the probe tip, or optically heating a tip of the thermal probe using a laser. Applications of the invention include identification of voids in metallic layers in semiconductors; mapping dopant concentration in semiconductors; measuring thickness of a sample material; mapping thermal hot spots and other characteristics of a sample material.