Abstract: The method is characterized by steps consisting in: a) producing a substrate of GaAs or of InP, b) growing epitaxially on said substrate a separating layer of AlGaAs or of AlInAs that is aluminum-rich, c) growing epitaxially on said separating layer an active layer including aluminum-rich material, d) making a set of components by etching and metallization, e) applying a protective layer of a passivation material or of a photosensitive resin, f) selectively etching said protective layer so as to bare the separating layer between the components, g) fixing a common support plate on the assembly so as to hold the components together mechanically, and h) dissolving the material of the separating layer by the chemical action of a solvent on the bared regions, while leaving intact the other materials so as to separate the substrate from the components without dissolving the substrate.

Abstract: The method is characterized by the steps consisting in: a) producing a semi-insulating or n-type substrate; b) forming a separating layer of a p.sup.+ -type doped material on the surface of said substrate; c) forming an active layer on said separating layer, the active layer including at least a bottom layer with n-type doping; d) making a set of semiconductor components by etching and metalizing said active layer; g) fixing a common support plate on the assembly made in this way, thereby holding the components together mechanically; and h) dissolving the material of the separating layer anodically and without illumination while leaving the other materials intact, thereby separating the substrate from said components without dissolving the substrate.

Abstract: The semiconductor component, comprises a succession of alternating stacked layers of a III-V semiconductor material with a large forbidden band such as Al.sub.x Ga.sub.1-x As and a III-V semiconductor material with a small forbidden band such as GaAs with p-doping, defining a quantum (9) with sub-bands of HH and LH type in the region of the layer comprising the material with a small forbidden band in the valence band diagram (E.sub.v) of each corresponding heterostructure. According to the invention, the thickness of the material with a small forbidden band is essentially selected in such a manner that only two quantum sub-levels LH.sub.1 and HH.sub.1 appear in the well, and the energy difference between these two sub-levels corresponds to the energy of the photons (6) to be detected, and the composition of the material with the large forbidden band is essentially selected in such a manner that the height adjacent the barrier (.DELTA.E.sub.

Abstract: The circuit comprises a heterojunction formed between a layer (6) comprising an III-V semiconductor material having a wide forbidden band and a layer (5) comprising an III-V semiconductor material having a narrow forbidden band and whose crystal lattice mismatch with the remainder of the structure is such that the layer comprising the narrow forbidden band material is under uniaxial compression strain in the plane of the layer.According to the invention the thickness of the layer (6) comprising the wide forbidden band material is selected to be smaller for the p-channel transistor than for the n-channel transistor, the ratio of these respective thicknesses being a predetermined ratio that is a function of the relative tunnel transparency for holes compared with that for electrons.

Abstract: Component comprising a stack of at least two associated elementary cells (1, 2) with different spectral response features, characterized in that at least one of the elementary cells is capable of being mechanically deformed. The flexibility of this cell is sufficiently high that it can adhere directly to the other cell simply by van der Waals' interaction between the two surfaces opposite the elementary cells. The interface (20) separating the two opposite surfaces can be either sufficiently thin to form a tunnel junction electrically coupling both elementary cells to one another, the opposite layers of the elementary cells then being layers of degenerated semiconductor material p.sup.+ and n.sup.+, sufficiently high to prevent any coupling between the two elementary cells, said cells then each having its own pairs of electrodes leading to separate terminals of the component.

Abstract: The method comprises the following steps:(a) producing a first cell (1) comprising a first substrate (4), a first optically active layer (5), and between said substrate and said active layer, a soluble thin layer (12);(b) producing a second cell (2) comprising a second substrate (8) and a second optically active layer (9), different in nature from the first;(c) placing said two cells face to face so that the active layers face each other;(d) uniting the two elementary cells via their active layers by means of a transparent adhesive (3); and(e) dissolving the material of the soluble layer while leaving the other materials intact, thereby separating the first substrate from the remainder of the structure, without dissolving the first substrate.