Abstract: A system for determining at least one property of a sheet dielectric sample using terahertz radiation includes at least one terahertz transmitter configured to output a pulse of terahertz radiation, a terahertz receiver configured to receive at least a portion of the pulse of terahertz radiation, wherein the terahertz receiver is configured to output a measured waveform based on the terahertz radiation received by the terahertz receiver, and a control unit in communication with the terahertz receiver. Wherein the control unit is configured to choose at least one region of interest of the measured waveform, compare the at least one region of interest of the measured waveform to a model waveform, vary at least one parameter of a model waveform to minimize the difference between the model waveform and the measured waveform.

Abstract: A system and method for detecting anomalies concealed upon a person may include a detection probe having an electromagnetic transmitter and an electromagnetic receiver. The electromagnetic transmitter is configured to emit electromagnetic pulses, while the electromagnetic receiver is configured to sample electromagnetic pulses from the electromagnetic receiver at specified times within a waveform window. The electromagnetic pulses may span the terahertz spectral region of 0.04 to 4 THz. The system may also have optical fibers connected to the electromagnetic transmitter and electromagnetic receiver, wherein femtosecond laser pulses are directed from a source to the electromagnetic transmitter and the electromagnetic receiver by the optical fibers.

Abstract: A system for transmitting and receiving electromagnetic radiation includes a beam splitter and a transceiver. The beam splitter is configured to separate an optical pulse into a pump pulse and a probe pulse. The transceiver may include a transmitter switch and a receiver switch. The pump pulse is directed toward the transmitter switch and the probe pulse is directed towards the receiver switch. Electromagnetic radiation is emitted from the transceiver when the pump pulse strikes the transmitter switch. The electromagnetic radiation may be terahertz radiation in either a pulsed or continuous wave form.

Abstract: A system for determining a material property at an interface between a first layer and a second layer includes a transmitter outputting electromagnetic radiation to the sample, a receiver receiving electromagnetic radiation that was reflected by or transmitted though the sample, and a data acquisition device. The data acquisition device digitizes the electromagnetic radiation to yield waveform data. The waveform data represents the radiation reflected by or transmitted though the sample. The material property to be determined is generally the adhesive strength between the first and second layers.

Abstract: A system for interpreting terahertz radiation includes a terahertz transmitter configured to output a pulse of terahertz radiation and a terahertz receiver configured to receive at least a portion of the pulse of radiation from the terahertz transmitter. The terahertz receiver is configured to output a signal based on the radiation received by the terahertz receiver.

Abstract: A semiconductor structure includes a GaAs or InP substrate, an InxGa1-xAs epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the InxGa1-xAs epitaxial layer.

Abstract: A system and method to measure, with increased precision, the transit time position(s) of pulses in a time domain data. An example data set would be the transit time of pulses in Time-Domain Terahertz (TD-THz) data. The precision of the pulse timing directly affects the precision of determined sample properties measurements (e.g., thickness). Additionally, an internal calibration etalon structure and algorithm method provides for continuous system precision/accuracy check method to increase sample measurement integrity. The etalon structure can improve the precision of sample property measurements (e.g., absolute thickness). Various hardware and system implementations of the above are described.

Abstract: A system for reducing effects relating to stretching of an optical fiber includes an optical control source, the optical source outputting an optical signal, a terahertz transmitter and receiver both being optically coupled to the optical source, and a means for providing the optical signal to both the terahertz transmitter and terahertz receiver such that the terahertz receiver is synchronized to the terahertz transmitter by the optical signal. The means prevents the stretching of an fiber carrying the optical signal provided to the terahertz transmitter or terahertz receiver or allows for the stretching an optical fiber such that the terahertz receiver will still be synchronized to the terahertz transmitter by the optical signal.

Abstract: A system for varying a delay of an optical beam has a rotatable wheel and a set of one or more prisms mounted about a circumference of the rotatable wheel. The set of one or more prisms are positioned to retroreflect the optical beam that passes approximately tangent to the rotatable wheel to cause a delay or phase shift to the beam as the rotatable wheel rotates.

Abstract: A system for determining a material property at an interface between a first layer and a second layer includes a transmitter outputting electromagnetic radiation to the sample, a receiver receiving electromagnetic radiation that was reflected by or transmitted though the sample, and a data acquisition device. The data acquisition device is configured to digitize the electro-magnetic radiation reflected by or transmitted though the sample to yield waveform data, wherein the waveform data represents the radiation reflected by or transmitted though the sample, the waveform data having a first magnitude, a second magnitude and a third magnitude. The material property to be determined is generally the adhesive strength between the first and second layers.

Abstract: A system for reducing effects relating to stretching of an optical fiber includes an optical control source, the optical source outputting an optical signal, a terahertz transmitter and receiver both being optically coupled to the optical source, and a means for providing the optical signal to both the terahertz transmitter and terahertz receiver such that the terahertz receiver is synchronized to the terahertz transmitter by the optical signal. The means prevents the stretching of an fiber carrying the optical signal provided to the terahertz transmitter or terahertz receiver or allows for the stretching an optical fiber such that the terahertz receiver will still be synchronized to the terahertz transmitter by the optical signal.

Abstract: A PIN photodetector includes a first semiconductor contact layer, a semiconductor absorption layer having a larger area than the first semiconductor contact layer, a semiconductor passivation layer positioned between the first semiconductor contact layer and absorption layer, and a second semiconductor contact layer. The semiconductor absorption layer and passivation layers are positioned between the first and second semiconductor contact layers.

Abstract: A system to detect an article includes one or more terahertz modules. Each module either generates or receives, or both generates and receives, terahertz radiation. Some of the terahertz radiation is reflected from the article and the remainder of the terahertz radiation is transmitted through the article. A processor analyzes the reflected and transmitted terahertz radiation to characterize the article.

Abstract: The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.

Abstract: A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the two contact areas and a semiconductor absorption layer is positioned between the multiplication layer and the upper contact layer. The photodiode has a low capacitance and a low field near the edges of the semiconductor multiplication and absorption layers.

Abstract: This invention is directed to a fiber attachment including a hot pad and solder glass that attaches an optical fiber to the hot pad. The attached is formed by positioning the optical fiber over the hot pad and aligning the optical fiber. The optical fiber is then raised and solder glass preforms are positioned on the hot pad. Heat is applied to the glass preforms such that they melt. Once the preforms are melted, the optical fiber is lowered into the molten solder glass. The current is then removed and the solder glass solidifies as it cools to form an attachment between the optical fiber and the hot pad.

Abstract: The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particular, the doping is concentration graded from a high value near the anode to a lower p concentration towards the cathode. By grading the doping in this way, an increase in absorption is achieved, improving the responsivity of the device. Although this doping increases the capacitance relative to an intrinsic semiconductor of the same thickness, the pseudo electric field that is created by the graded doping gives the electrons a very high velocity which more than compensates for this increased capacitance.

Abstract: The present invention is a fiber optic waveguide adapted for focusing a beam of light at an obtuse angle to the optical axis. A focusing end of the fiber optic is polished at an angle such that the surface normal does not coincide with the optical axis, which is defined by the path of the beam of light through the fiber optic waveguide. The angle ? is necessarily greater than 0 degrees and less than 90 degrees. The present invention further includes a focusing lens coupled to the outside of the fiber optic waveguide at its focusing end. The focusing lens may be a ball lens, and it is attached to the exterior of the cladding layer by an adhesive material.

Abstract: The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures.

Abstract: A system and method for using terahertz radiation to detect and monitor a substance undergoing a change in phase from a liquid phase to a solid phase or vice-versa is disclosed. By employing terahertz radiation in either the pulsed mode or in the continuous-wave (CW) mode, the system can non-invasively monitor these changes. The system uses the principle that matter in a liquid state will absorb and attenuate terahertz radiation to a larger degree than matter in a semisolid or solid state. Most terahertz radiation absorption occurs due to the rotational motions of molecules, i.e. either whole molecules or groups of atoms rotating about molecular bonds.