Abstract: A chemical vapor deposition system includes first inlets that are located in a gas injector. Second inlets are also located in the gas injector. A first piping branch provides a gas to the first inlets and/or the second inlets. The first piping branch provides the gas at a first flow rate to the first inlets and/or at a second flow rate to the second inlets. A second piping branch provides a gas to the first inlets and/or the second inlets. The second piping branch provides the gas at at least a third flow rate to the first inlets and/or the second inlets.

Abstract: A chemical vapor deposition (CVD) apparatus includes at least one susceptor mounted in a non-horizontal position, and at least one holder rotatably mounted on a first surface of the susceptor for holding wafers. The holder may be rotatable around a holder axis. A showerhead may be mounted at or near a center of the susceptor. The showerhead may release a reaction gas that flows radially toward a periphery of the susceptor. The holder may have a mass center that is eccentric from the holder axis to allow movement relative to the susceptor when the susceptor rotates.

Abstract: A liquid tank includes at least one main tank, a supplemental tank and a transmission module. The main tank is supplied with a first liquid. The supplemental tank is supplied with a second liquid. The transmission module is connected between the supplemental tank and the at least one main tank. The transmission module is configured to supply the second liquid into the main tank while the first liquid in the main tank is lowered down to a first position, and to stop supplying the second liquid into the main tank while the first liquid in the main tank is raised up to the first position. A thin film deposition apparatus using the aforementioned liquid tank is also provided.

Abstract: A thin film deposition apparatus and a using method thereof are disclosed. The apparatus includes a preheating chamber, a reacting chamber, a cooling chamber, and at least one transmission module. The preheating chamber is configured for preheating the substrate. The reacting chamber is configured for receiving the substrate being preheated and transferred from the preheating chamber, heating the substrate to a working temperature, depositing a thin film on the substrate under the working temperature, and cooling the substrate being deposited to a temperature lower than the working temperature. The cooling chamber is configured for receiving the substrate being deposited and transferred from the reacting chamber and further cooling the substrate. The transmission module is configured for transferring the substrate between the preheating chamber, the reacting chamber, and the cooling chamber.

Abstract: An embodiment of this invention provides a gas preheating system for heating one or more gases used in a chemical vapor deposition. The preheating system comprises a heating module and a delivery module. The delivery module is used for passing the one or more gases, and the heating module is configured to heat the one or more gases indirectly via the delivery module.

Abstract: A system for forming one or more layers of material on one or more substrates is described. The system includes a vacuum chamber and a showerhead located in the vacuum chamber. A door in a wall of the vacuum chamber allows for loading and unloading of the one or more substrates in the vacuum chamber while under vacuum. A drive mechanism coupled to the showerhead moves the showerhead between a first position and a second position while under vacuum. In the first position, the showerhead is positioned to allow access to the door for loading and unloading of the one or more substrates through the door. In the second position, the showerhead is positioned to inhibit access to the door inside the vacuum chamber.

Abstract: System for forming one or more layers of one or more materials on one or more substrates. The system includes a susceptor component configured to rotate around a susceptor axis, and at least one substrate holder located directly or indirectly on the susceptor component and configured to support the one or more substrates. The substrate holder is further configured to cause the one or more substrates to rotate around at least the susceptor axis. Additionally, the system includes at least one heating device configured to heat the one or more substrates. Each of the one or more substrates includes a substrate surface facing the heating device and associated with a bow height, and the heating device is located away from the substrate surface by a distance. For each of the one or more substrates, the distance is at least twenty times as large as the bow height.

Abstract: A material deposition system is provided for forming one or more layers of one or more materials on one or more substrates. The system includes a susceptor component. A plurality of substrate holders are supported on or over the susceptor component. Either the susceptor component is configured to rotate around a susceptor axis, or each substrate holder is configured to rotate about a respective holder axis, or both. Heating devices heat each substrate to a substantially constant temperature relative to a radial distance of the substrate from a central point of the susceptor component substantially only through heat convection or radiation, with comparatively little, if any, heat conduction through the susceptor component and the one or more substrate holders.

Abstract: A system for forming one or more layers of material on one or more substrates is disclosed. The system includes a susceptor that rotates around a central susceptor axis. One or more holder gears are located on the susceptor. The holder gears may rotate around the central susceptor axis with the susceptor. A central gear engaged to the holder gears may cause the holder gears to rotate around holder axes of the respective holder gears while the holder gears rotate around the central susceptor axis. The susceptor and the central gear may rotate independently.

Abstract: A system for forming one or more layers of material on one or more substrates is disclosed. The system includes a susceptor that rotates around a central susceptor axis. One or more holder gears are located on the susceptor. The holder gears may rotate around the central susceptor axis with the susceptor. Teeth of at least two adjacent holder gears at least partially overlap without touching. A central gear engaged to the holder gears may cause the holder gears to rotate around holder axes of the respective holder gears while the holder gears rotate around the central susceptor axis.