Abstract: An actuator (1) is provided with: a movable part (120); a support part (110, 210) which supports the movable part; and a plurality of torsion bars (230) (i) each of which connects the movable part and the support part along a long direction such that the movable part is capable of swinging around a rotational axis which is along the long direction and (ii) which are arranged along a short direction; the farther each torsion bar is from the rotational axis, the smaller a spring constant of each torsion bar is.

Abstract: An electrostatic actuator includes: a fixed driving electrode that is disposed on a silicon substrate; a movable driving electrode that is disposed so as to face the fixed driving electrode and approaches the fixed driving electrode with an electrostatic force generated between the movable driving electrode and the fixed driving electrode; and a pair of spacers that comes in contact with the movable driving electrode in an approaching state in which the fixed driving electrode and the movable driving electrode approach each other and forms a prescribed air gap between the fixed driving electrode and the movable driving electrode, wherein each of the spacers has a spacer electrode portion that comes in contact with the movable driving electrode via an insulator and has the same potential as one of the electrodes at least in the approaching state.

Abstract: An electronic device is obtained in such a way that a MEMS substrate having a MEMS element mounted thereon and a CMOS substrate are bonded together at bonding surfaces and with a bonding material M having fluidity, wherein the MEMS substrate has a bonding projection part provided to project from a substrate main body and having the bonding surface and a gap formation part disposed between the bonding projection part and the MEMS element, and the gap formation part is supported by the bonding projection part via a plurality of support pieces extending from the bonding projection part and forms reception gaps, which are capable of receiving the bonding material M extruded from the bonding surface to the side of the MEMS element, between the wall surface thereof and the bonding projection part.

Abstract: An electronic device 1 has a first semiconductor substrate 2 on which a bonding projection section 42 is projected via an insulation film 41, a second semiconductor substrate 3 that is bonded by welding the bonding projection section 42 of the first semiconductor substrate 2 via conductive bonding material, a through hole 54 that is formed to penetrate the bonding projection section 42 and the insulation film 41 in a bonding direction, and a conduction wiring section 44 that is formed by the conductive bonding material filled in the through hole 54 at a time of bonding by welding and conducts the first semiconductor substrate 2 with the second semiconductor substrate 3 to have same electric potential.

Abstract: A recording apparatus records information onto a recording medium. The recording apparatus is provided with: a near-field light device; and a control unit for controlling the near-field light device. The near-field light device is provided with: a light source; a quantum dot structure which is laminated on the light source; a plurality of quantity dots which are included in the quantity dot structure and each of which generates near-field light on the basis of light emitted from the light source; and an output end which is configured to output at least one portion of energy of the near-field light to the exterior of the quantity dot structure. The control unit of the recording apparatus controls the light source to emit the light upon recording the information, thereby increasing temperature of a region of the recording medium based on a size of the output end.

Abstract: A method for producing a near-field optical device is provided with: a step for forming a near-field light generation unit (10) on one surface of a transparent substrate (32); a step for forming a light source (20); and a step for adhering the transparent substrate on which the near-field light generation unit is formed, with the light source. Thereby, a method for producing a near-field optical device suited for mass production can be provided.

Abstract: A light amount detecting apparatus includes: a photoelectric converting element converting quantity of light inputted to current; a current/voltage converting device having a positive input terminal connected to a first terminal of the photoelectric converting element, a negative input terminal connected to a second terminal of the photoelectric converting element, a negative output terminal for reversing polarity of a current inputted to the positive input terminal and outputting it as a voltage, a positive output terminal for reversing polarity of a current inputted to the negative input terminal and outputting it as a voltage, a first negative feedback resistor connecting the positive and negative output terminals, and a second negative feedback resistor connected between the negative and positive output terminals, the current/voltage converting device setting the photoelectric converting element in zero bias and converting the converted current to the voltage; and an amplifying device for amplifying the c

Abstract: A recording apparatus records information onto a recording medium. The recording apparatus is provided with: a near-field light device; and a control unit for controlling the near-field light device. The near-field light device is provided with: a light source; a quantum dot structure which is laminated on the light source; a plurality of quantity dots which are included in the quantity dot structure and each of which generates near-field light on the basis of light emitted from the light source; and an output end which is configured to output at least one portion of energy of the near-field light to the exterior of the quantity dot structure. The control unit of the recording apparatus controls the light source to emit the light upon recording the information, thereby increasing temperature of a region of the recording medium based on a size of the output end.

Abstract: A method of bonding a semiconductor substrate has a step of pressurizing and heating to bond a substrate 11 with a substrate 12 by eutectic bonding in a state that an aluminum containing layer 31 and a germanium layer 32 between a bonding section 30a of the substrate 11 and a bonding section 30b of the substrate 21 are overlaid and an outer end 32a of the germanium layer 32 is receded inward with respect to an outer end 31a of the aluminum containing layer 31.

Abstract: An electronic device 1 has a first semiconductor substrate 2 on which a bonding projection section 42 is projected via an insulation film 41, a second semiconductor substrate 3 that is bonded by welding the bonding projection section 42 of the first semiconductor substrate 2 via conductive bonding material, a through hole 54 that is formed to penetrate the bonding projection section 42 and the insulation film 41 in a bonding direction, and a conduction wiring section 44 that is formed by the conductive bonding material filled in the through hole 54 at a time of bonding by welding and conducts the first semiconductor substrate 2 with the second semiconductor substrate 3 to have same electric potential.

Abstract: An electron emission element has an electron emission layer that emits an electron from a surface emission portion, a focusing electrode layer that is film-formed on a surface of the electron emission layer via a first insulation layer and focuses the emitted electron, a gate electrode layer that is film-formed on a surface of the focusing electrode layer via a second insulation layer, an emission concave portion that penetrates the gate electrode layer, the second insulation layer, the focusing electrode layer and the first insulation layer and opens in a concave shape on a surface of the surface emission portion, a carbon layer that is film-formed from a surface of the gate electrode layer over an inner peripheral surface of the emission concave portion, and a partial insulation portion that insulates the focusing electrode layer from the carbon layer.

Abstract: A method of bonding a semiconductor substrate having a substrate 11 formed with a MEMS sensor and a substrate 21 having a bonding portion 30b film-formed by contacting an aluminum containing layer 31 with a germanium layer 32 on either a front surface or a rear surface and formed with an integrated circuit that controls the MEMS sensor, either a front surface or a rear surface of the substrate 11 is put to contact directly on the bonding portion of the substrate 21 to bond by eutectic bonding with pressurization and heating.

Abstract: Disclosed is a method for bonding semiconductor substrates, wherein an eutectic alloy does run off the bonding surfaces during the eutectic bonding. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically, a substrate (11) and a substrate (21) are eutectically bonded with each other by pressing and heating the substrate (11) and the substrate (21), while interposing an aluminum-containing layer (31) and a germanium layer (32) between a bonding part (30a) of the substrate (11) and a bonding part (30b) of the substrate (21) in such a manner that the aluminum-containing layer (31) and the germanium layer (32) overlap each other, with an outer edge (32a) of the germanium layer (32) being inwardly set back from the an outer edge (31a) of the aluminum-containing layer (31).

Abstract: A method of bonding a semiconductor substrate in which a first semiconductor substrate is bonded with a second semiconductor substrate by eutectic bonding with pressurization and heating, an aluminum containing layer primarily made of aluminum and a germanium layer in a polymer state being interposed between a bonding surface of the first semiconductor substrate and a bonding surface of the second semiconductor substrate, the method including a step of: setting a weight ratio of the germanium layer to an aluminum containing layer to be eutectic alloyed is between 27 wt % to 52 wt %.

Abstract: An electron emission element has an electron emission layer that emits an electron from a surface emission portion, a focusing electrode layer that is film-formed on a surface of the electron emission layer via a first insulation layer and focuses the emitted electron, a gate electrode layer that is film-formed on a surface of the focusing electrode layer via a second insulation layer, an emission concave portion that penetrates the gate electrode layer, the second insulation layer, the focusing electrode layer and the first insulation layer and opens in a concave shape on a surface of the surface emission portion, a carbon layer that is film-formed from a surface of the gate electrode layer over an inner peripheral surface of the emission concave portion, and a partial insulation portion that insulates the focusing electrode layer from the carbon layer.

Abstract: A light amount detecting apparatus includes: a photoelectric converting element converting quantity of light inputted to current; a current/voltage converting device having a positive input terminal connected to a first terminal of the photoelectric converting element, a negative input terminal connected to a second terminal of the photoelectric converting element, a negative output terminal for reversing polarity of a current inputted to the positive input terminal and outputting it as a voltage, a positive output terminal for reversing polarity of a current inputted to the negative input terminal and outputting it as a voltage, a first negative feedback resistor connecting the positive and negative output terminals, and a second negative feedback resistor connected between the negative and positive output terminals, the current/voltage converting device setting the photoelectric converting element in zero bias and converting the converted current to the voltage; and an amplifying device for amplifying the c

Abstract: A drive method for a circuit apparatus includes: a cold cathode electron-emission element; a MOS transistor in which one of a source region and a drain region is electrically connected to one electrode of the cold cathode electron-emission element; a first voltage source electrically connected to another electrode of the cold cathode electron-emission element; and a second voltage source which is electrically connected to a semiconductor well region in which the MOS transistor is formed. The drive method is provided with: an electron-emission part forming process in which a first potential signal is outputted from the first voltage source and a second potential signal, which is different from the second potential signal, is outputted from the second voltage source so that a forward current flows in a p-n junction between the semiconductor well region and the one region when an electron-emission part is formed in the cold cathode electron-emission element.

Abstract: An object is to provide an image signal processing device capable of converting digital image signals into analog image signals using a circuit of small scale. Addition high-order bit pixel data is generated by adding, to high-order bit pixel data comprising an high-order consecutive bits of input pixel data, a value corresponding to the least significant bit digit of the high-order bit pixel data. In a prescribed period, during a time period corresponding to a value of low-order bit pixel data comprising low-order consecutive bits of the input pixel data, the addition high-order bit pixel data is taken to be the data for D/A conversion, and in other period, the high-order bit pixel data is taken to be the data for D/A conversion. By means of this configuration, even when the resolution of a D/A converter is lower than the resolution required by the input pixel data, the resolution of the image ultimately viewed during the prescribed period is equivalent to the resolution required by the input pixel data.

Abstract: A display controller is provided which can control the display of a fast moving image with higher quality in an active matrix display apparatus DD. When the display pattern of an image is controlled in a display apparatus DD constituted of a plurality of pixels S arranged in a matrix form, the pixel including a light-emitting device, an image is displayed by driving the pixels S only for predetermined illuminating period shorter than a vertical synchronizing period.

Abstract: A telecine conversion method detecting apparatus which determines that an input video signal is a telecine converted video signal generated from a movie film in accordance with a 2-3 pull-down method when detecting that an inter-frame difference accumulated value of a current field of the input video signal is equal to or less than a threshold value for still field determination, that each inter-frame difference accumulated value of four fields preceding the current field is equal to or greater than a threshold value for motion field determination, and that the inter-frame difference accumulated value of the current field is less than each corrected value calculated by multiplying each of the inter-frame difference accumulated values of the four preceding fields by a predetermined coefficient.