Abstract: A method for temperature measurement used in an RF processing apparatus for semiconductor includes generating by electrodes an RF signal sequence having multiple discontinuous RF signals that are separated by a time interval; and generating a temperature sensing signal by a thermal sensor during the time interval.

Abstract: The invention provides a wafer heating pedestal including a shaft connected to a bottom of a plate. The shaft holds a contact array being in contact with plural contact pads of the plate. The contact array includes plural contact columns.

Abstract: A ceramic ring for supporting a wafer, comprising: a body; and an annular recess provided in the center of the body, the annular recess having a bottom surface and a buffer portion extending upwards from the bottom surface to the surface of the body. The ceramic ring can ensure reliability in positioning the wafer, and can prevent the edge side of the wafer from generating particles by contacting the ceramic ring.

Abstract: Disclosed is a load lock chamber which includes a chamber body including: at least one pair of cavities, defined in a layer structure of the chamber body to carry one or more wafer substrates; at least one internal conduit, defined between and coupled with the paired cavities, such that the paired cavities are communicated with each other and capable of conducting gas refilling and exhaustion; and a plurality of wafer supports for carrying the wafer substrates, the plurality of wafer supports being securely received in the paired cavities and able to calibrate with a machine arm frontend finger, wherein the wafer support includes grooves defined thereon for calibrating the machine arm frontend finger.

Abstract: The invention discloses a support structure for a wafer pedestal; particularly the wafer pedestal has a wafer carrying surface defining holes for accommodation of the support structure. The support structure includes a first surface and extends therebetween. The first surface includes a rising portion for supporting wafer. A center of the first surface and a center of the second surface define an axis that is not parallel to the normal of the first surface. That is, the first surface extends oblique relatively to the second surface such that the support structure according to the invention can be received in the pedestal in an oblique way relative to the wafer carrying surface of the pedestal.