Abstract: Provided are an epitaxial growth apparatus and a multi-layer gas supply module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a multi-layer gas supply module configured to supply a gas to the reaction chamber to form an epitaxial layer on the wafer, wherein the multi-layer gas supply module includes an injector including ports of a plurality of layers, each of which discharges a different gas for each layer, among the ports of the plurality of layers, the ports of each layer including a center port corresponding to a central region of the wafer, and a pair of edge ports corresponding to both edge regions of the wafer, and a flow distribution unit configured to distribute gas flows input to the center port and the edge port among the ports of each layer independently from each other.

Abstract: Provided are an epitaxial growth apparatus and a gas supply control module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a gas supply control module configured to control a flow of a gas flowing into the reaction chamber, wherein the gas supply control module includes an injector including a center port corresponding to a central region of the wafer, a pair of edge ports corresponding to both edge regions of the wafer, and a pair of middle ports respectively disposed between the center port and the pair of edge ports, and a flow distribution unit configured to independently distribute the gas flow input from a source module to the ports.