Abstract: Disclosed is a system for treating exhaust fluid from semiconductor manufacturing equipment in which cleaning gases decomposed by a plastic apparatus alternately flow towards a front rotor region (a main rotor unit) and a rear rotor region (a subsidiary rotor unit) of a booster pump and then flow towards a dry pump, and thus uniformly react with process byproducts present throughout the whole area in a vacuum pump including the booster pump and the dry pump so as to improve removal efficiency of the process byproducts. Further, the retention time of the cleaning gases decomposed by the plasma apparatus in the vacuum pump is increased by adjusting the pressure in the pump with the rotational speed of a motor, and thus the reaction time of the cleaning gases with the process byproducts is increased, so as to further improve removal efficiency of the process byproducts, such as SiO2 powder.

Abstract: Disclosed is a pump system for a semiconductor chamber includes a housing having a front chamber and a rear chamber, a roots-type rotor provided to the front chamber of the housing, a screw-type rotor provided to the rear chamber, a shaft member coupled through the roots-type rotor and the screw-type rotor, and a driving motor provided to the outside of the housing in such a way as to be axially connected to the shaft member to provide power for driving the rotors. A fluid pipe is provided to the outside of the housing to connect the front chamber and the rear chamber. The fluid pipe is provided with a heater and/or a cooler to heat or cool the fluid flowing through the fluid pipe.

Abstract: Disclosed is a system for treating exhaust fluid from semiconductor manufacturing equipment in which cleaning gases decomposed by a plastic apparatus alternately flow towards a front rotor region (a main rotor unit) and a rear rotor region (a subsidiary rotor unit) of a booster pump and then flow towards a dry pump, and thus uniformly react with process byproducts present throughout the whole area in a vacuum pump including the booster pump and the dry pump so as to improve removal efficiency of the process byproducts. Further, the retention time of the cleaning gases decomposed by the plasma apparatus in the vacuum pump is increased by adjusting the pressure in the pump with the rotational speed of a motor, and thus the reaction time of the cleaning gases with the process byproducts is increased, so as to further improve removal efficiency of the process byproducts, such as SiO2 powder.