Patents Assigned to PLANT PV
  • P-TYPE DOPING OF II-VI MATERIALS WITH RAPID VAPOR DEPOSITION USING RADICAL NITROGEN
    Publication number: 20150053259
    Abstract: Apparatus and methods to incorporate p-type dopants in II-VI semiconducting layers are disclosed herein. In some embodiments, radical nitrogen is introduced in a physical vapor deposition apparatus operating at moderate pressures (e.g. 10?5 Torr to 100 Torr). The radical nitrogen allows for in-situ doping of II-VI materials, such as ZnTe, to degenerate levels.
    Type: Application
    Filed: August 22, 2014
    Publication date: February 26, 2015
    Applicant: PLANT PV
    Inventors: Brian E. Hardin, James Randy Groves, Stephen T. Connor, Craig H. Peters